MT9HTF6472Y-40EB2 Micron Technology Inc, MT9HTF6472Y-40EB2 Datasheet - Page 10

• Manufacturer Part Number: MT9HTF6472Y-40EB2
• Description: MODULE SDRAM DDR2 512MB 240DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472Y-40EB2

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 600ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.035A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 244
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 10:
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
Parameter/Condition
Operating one bank active-precharge current;
t
commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one bank active-read-precharge current; I
= 4, CL = CL (I
(I
commands; Address bus inputs are switching; Data pattern is same as
I
Precharge power-down current; All device banks idle;
CKE is LOW; Other control and address bus inputs are STABLE; Data bus
inputs are floating
Precharge quiet standby current; All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current; All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching;
Data bus inputs are switching
Active power-down current; All device banks open;
=
inputs are stable; Data bus inputs are floating
Active standby current; All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current; All device banks open, continuous
burst writes; BL = 4, CL = CL (I
MAX (I
commands; Address bus inputs are switching; Data bus inputs are
switching
Operating burst read current; All device banks open, Continuous burst
reads, I
t
commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current;
(I
control and address bus inputs are switching; Data bus inputs are
switching
Self refresh current; CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current; All device banks
interleaving reads, I
t
(I
inputs are stable during deselects; Data bus inputs are switching; See
I
RC (I
DD
RAS MAX (I
RAS MAX (I
CK (I
DD
DD
DD
DD
t
CK (I
4W
7 Conditions for detail
),
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
); CKE is HIGH, S# is HIGH between valid commands; Address bus
DD
DD
t
RCD =
DD
DD
OUT
),
);
),
t
); CKE is LOW; Other control and address bus
t
RAS =
CK =
t
= 0mA; BL = 4, CL = CL (I
RP =
DD
DD
t
DD
RCD (I
I
Values shown for DDR2 SDRAM components only
),
),
DD
t
), AL = 0;
CK (I
t
t
t
t
RP =
RP =
RAS MIN (I
RP (I
Specifications and Conditions – 512MB
DD
OUT
DD
DD
t
t
); CKE is HIGH, S# is HIGH between valid
RP (I
RP (I
),
= 0mA; BL = 4, CL = CL (I
t
); CKE is HIGH, S# is HIGH between valid
CK =
t
t
CK =
RC =
DD
DD
DD
DD
); CKE is HIGH, S# is HIGH between valid
); CKE is HIGH, S# is HIGH between valid
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
t
); CKE is HIGH, S# is HIGH between valid
CK (I
t
t
CK (I
RC (I
), AL = 0;
DD
DD
DD
DD
), AL = 0;
); REFRESH command at every
),
),
t
t
t
RC =
RRD =
CK =
t
RC (I
t
t
CK (I
CK =
DD
t
RRD (I
t
CK =
), AL =
t
t
DD
CK =
CK =
DD
t
CK (I
),
t
DD
),
CK
t
t
CK (I
RAS =
t
t
),
t
t
OUT
RAS =
t
CK (I
t
CK (I
CK =
RCD (I
CK =
DD
t
Fast PDN Exit
MR[12] = 0
Slow PDN Exit
MR[12] = 1
RCD =
10
DD
),
= 0mA; BL
DD
DD
t
t
t
),
t
RAS =
RAS MIN
CK (I
t
CK (I
DD
RAS
); CKE is
),
t
RAS =
t
) - 1 ×
t
RCD
RC =
t
DD
DD
RFC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
);
);
Symbol -80E/-
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
1,035
1,755
1,845
2,070
2,700
800
900
450
495
360
108
630
63
63
Electrical Specifications
1,530
1,620
1,620
2,160
-667
810
945
405
450
315
108
585
63
63
©2005 Micron Technology, Inc. All rights reserved.
1,260
1,305
1,530
2,025
-53E
720
855
360
405
270
108
495
63
63
1,035
1,035
1,485
1,980
-40E
720
810
315
360
225
108
405
63
63
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA