MT9HTF6472Y-40EB2 Micron Technology Inc, MT9HTF6472Y-40EB2 Datasheet - Page 9
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MT9HTF6472Y-40EB2
Manufacturer Part Number
MT9HTF6472Y-40EB2
Description
MODULE SDRAM DDR2 512MB 240DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9HTF6472Y-40EB2.pdf
(18 pages)
Specifications of MT9HTF6472Y-40EB2
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Access Time (max)
600ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.035A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
244
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 9:
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
Parameter/Condition
Operating one bank active-precharge current;
(I
Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current; I
CL (I
t
are switching; Data pattern is same as I
Precharge power-down current; All device banks idle;
LOW; Other control and address bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby current; All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are STABLE; Data bus
inputs are floating
Precharge standby current; All device banks idle;
S# is HIGH; Other control and address bus inputs are switching; Data bus inputs
are switching
Active power-down current; All device banks open;
(I
stable; Data bus inputs are floating
Active standby current; All device banks open;
MAX (I
Other control and address bus inputs are switching; Data bus inputs are
switching
Operating burst write current; All device banks open, continuous burst
writes; BL = 4, CL = CL (I
t
are switching; Data bus inputs are switching
Operating burst read current; All device banks open, continuous burst reads,
I
t
inputs are switching; Data bus inputs are switching
Burst refresh current;
interval; CKE is HIGH, S# is HIGH between valid commands; Other control and
address bus inputs are switching; Data bus inputs are switching
Self refresh current; CK and CK# at 0V; CKE ≤ 0.2V; Other control and address
bus inputs are FLOATING; Data bus inputs are floating
Operating bank interleave read current; All device banks interleaving reads,
I
=
valid commands; Address bus inputs are stable during deselects; Data bus inputs
are switching; See I
RCD (I
RP (I
OUT
RP =
OUT
DD
DD
t
RC (I
),
); CKE is LOW; Other control and address bus inputs are
= 0mA; BL = 4, CL = CL (I
DD
= 0mA; BL = 4, CL = CL (I
DD
t
t
RAS =
RP (I
), AL = 0;
DD
DD
DD
); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs
); CKE is HIGH, S# is HIGH between valid commands; Address bus inputs
),
),
DD
t
t
RRD =
RP =
t
); CKE is HIGH, S# is HIGH between valid commands; Address bus
RAS MIN (I
I
Values shown for DDR2 SDRAM components only
DD
t
CK =
t
RP (I
Specifications and Conditions – 256MB
t
RRD (I
DD
7 Conditions for detail
DD
t
CK (I
DD
DD
t
); CKE is HIGH, S# is HIGH between valid commands;
CK =
DD
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands;
DD
DD
),
DD
t
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
),
t
), AL =
RCD =
CK (I
), AL = 0;
t
RC =
t
DD
CK =
t
t
RCD (I
t
RCD (I
); REFRESH command at every
RC (I
DD
t
t
CK =
4W
CK (I
DD
DD
DD
),
); CKE is HIGH, S# is HIGH between
) -1 ×
t
DD
t
CK (I
RAS =
),
t
CK =
t
t
t
RAS =
t
DD
CK =
CK (I
CK =
t
),
t
RAS MIN (I
CK =
t
CK (I
t
DD
RAS =
OUT
t
t
CK (I
t
CK =
t
t
CK (I
RAS MAX (I
CK =
);
t
9
DD
= 0mA; BL = 4, CL =
t
CK
CK =
DD
DD
t
),
t
CK (I
RAS MAX (I
t
CK (I
),
t
DD
); CKE is HIGH,
RAS =
Fast PDN Exit
MR[12] = 0
Slow PDN Exit
MR[12] = 1
t
t
RC =
CK (I
),
t
DD
RFC (I
DD
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
RCD =
); CKE is
); CKE is
t
DD
t
),
RAS
RC
DD
t
),
RP =
DD
t
)
RC
),
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
I
I
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
4R
2P
3P
0
1
5
6
7
Electrical Specifications
1,710
1,620
1,620
2250
-667
810
900
360
360
270
450
45
54
45
©2005 Micron Technology, Inc. All rights reserved.
1,440
1,350
1,530
2,160
-53E
720
810
315
315
225
360
45
54
45
1,125
1,035
1,485
2,070
-40E
675
765
225
270
180
270
45
54
45
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA