MT9HTF6472Y-40EB2 Micron Technology Inc, MT9HTF6472Y-40EB2 Datasheet - Page 11
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MT9HTF6472Y-40EB2
Manufacturer Part Number
MT9HTF6472Y-40EB2
Description
MODULE SDRAM DDR2 512MB 240DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9HTF6472Y-40EB2.pdf
(18 pages)
Specifications of MT9HTF6472Y-40EB2
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Access Time (max)
600ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.035A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
244
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 11:
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
Parameter/Condition
Operating one bank active-precharge current;
t
commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one bank active-read-precharge current; I
= 4, CL = CL (I
(I
commands; Address bus inputs are switching; Data pattern is same as
I
Precharge power-down current; All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current; All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current; All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching;
Data bus inputs are switching
Active power-down current; All device banks open;
=
inputs are stable; Data bus inputs are floating
Active standby current; All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current; All device banks open, continuous
burst writes; BL = 4, CL = CL (I
MAX (I
commands; Address bus inputs are switching; Data bus inputs are
switching
Operating burst read current; All device banks open, continuous burst
reads, I
t
commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current;
(I
control and address bus inputs are switching; Data bus inputs are
switching
Self refresh current; CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current; All device banks
interleaving reads, I
t
(I
inputs are stable during deselects; Data bus inputs are switching; See
I
RC (I
DD
RAS MAX (I
RAS MAX (I
CK (I
DD
DD
DD
DD
t
CK (I
4W
7 Conditions for detail
),
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
); CKE is HIGH, S# is HIGH between valid commands; Address bus
DD
DD
t
RCD =
DD
DD
OUT
),
);
),
t
); CKE is LOW; Other control and address bus
t
RAS =
CK =
t
= 0mA; BL = 4, CL = CL (I
RP =
DD
DD
t
DD
RCD (I
I
Values shown for DDR2 SDRAM components only
),
),
DD
t
), AL = 0;
CK (I
t
t
t
t
RP =
RP =
RAS MIN (I
RP (I
Specifications and Conditions – 1GB
DD
OUT
DD
DD
t
t
); CKE is HIGH, S# is HIGH between valid
RP (I
RP (I
),
= 0mA; BL = 4, CL = CL (I
t
); CKE is HIGH, S# is HIGH between valid
CK =
t
t
CK =
RC =
DD
DD
DD
DD
); CKE is HIGH, S# is HIGH between valid
); CKE is HIGH, S# is HIGH between valid
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
t
); CKE is HIGH, S# is HIGH between valid
CK (I
t
t
CK (I
RC (I
), AL = 0;
DD
DD
DD
DD
), AL = 0;
); REFRESH command at every
),
),
t
t
t
RC =
RRD =
CK =
t
RC (I
t
t
CK (I
CK =
DD
t
RRD (I
t
CK =
), AL =
t
t
DD
CK =
CK =
DD
t
CK (I
),
t
DD
),
CK
t
t
CK (I
RAS =
t
t
),
t
t
OUT
RAS =
t
CK (I
t
CK (I
CK =
RCD (I
CK =
DD
t
Fast PDN Exit
MR[12] = 0
Slow PDN Exit
MR[12] = 1
RCD =
11
DD
),
= 0mA; BL
DD
DD
t
t
t
),
t
RAS =
RAS MIN
CK (I
t
CK (I
DD
RAS
); CKE is
),
t
RAS =
t
) - 1 ×
t
RCD
RC =
t
DD
DD
RFC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
);
);
Symbol -80E/-
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
1,440
1,440
2,115
3,015
800
810
990
450
450
360
540
63
90
63
Electrical Specifications
1,215
1,215
1,935
2,520
-667
765
900
360
360
270
495
63
90
63
©2005 Micron Technology, Inc. All rights reserved.
1,125
1,125
1,890
2,430
-53E
630
855
360
360
270
405
63
90
63
1,845
2,340
-40E
630
810
315
315
270
360
945
945
63
90
63
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA