C8051T630DK Silicon Laboratories Inc, C8051T630DK Datasheet - Page 29

KIT DEV FOR C8051T630 FAMILY

C8051T630DK

Manufacturer Part Number
C8051T630DK
Description
KIT DEV FOR C8051T630 FAMILY
Manufacturer
Silicon Laboratories Inc
Type
MCUr
Datasheets

Specifications of C8051T630DK

Contents
Board, daughter boards, power adapter, cables, documentation and software
Processor To Be Evaluated
C8051T63x
Interface Type
USB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
C8051T630, T631, T632, T633, T634 and T635 MCUs
For Use With
336-1465 - BOARD SOCKET DAUGHTER 20-QFN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1464
Table 5.10. Temperature Sensor Electrical Characteristics
V
Table 5.11. Voltage Reference Electrical Characteristics
V
Parameter
Linearity
Slope
Slope Error*
Offset
Offset Error*
Note: Represents one standard deviation from the mean.
Parameter
On-Chip Reference (REFBE = 1)
Output Voltage
VREF Short-Circuit Current
VREF Temperature 
Coefficient
Load Regulation
VREF Turn-On Time 
(1.2 V setting)
VREF Turn-On Time 
(2.4 V setting)
Power Supply Rejection
External Reference (REFBE = 0)
Input Voltage Range
Input Current
Power Specifications
Reference Bias Generator
DD
DD
= 3.0 V,
= 3.0 V; –40 to +85 °C unless otherwise specified.
40 to +85 °C unless otherwise specified.
1.2 V Setting, 25 °C ambient
2.4 V Setting 25 °C ambient
Load = 0 to 200 µA to GND, 1.2 V setting
Load = 0 to 200 µA to GND, 2.4 V setting
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
4.7 µF tantalum, 0.1 µF ceramic bypass
0.1 µF ceramic bypass
1.2 V setting
2.4 V setting
Sample Rate = 500 ksps; VREF = 2.5 V
REFBE = 1, 2.4 V setting
Temp = 0 °C
Temp = 0 °C
Conditions
Conditions
Rev. 1.0
C8051T630/1/2/3/4/5
Min
1.195
Min
2.3
0
±0.5
3.49
Typ
±40
930
±12
2.35
Typ
±15
120
360
4.5
3.7
1.2
4.3
1.2
5.0
25
90
12
75
Max
1.205
Max
V
100
2.4
6
DD
mV/°C
µV/°C
Units
ppm/°C
µV/µA
µV/µA
mV
mV
Units
µV/V
µV/V
°C
mA
ms
ms
µA
µA
µs
µs
V
V
V
29

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