TLP3113(F) Toshiba, TLP3113(F) Datasheet - Page 2

• Manufacturer Part Number: TLP3113(F)
• Description: PHOTORELAY MOSFET 80MA 4-SOP
• Manufacturer: Toshiba
• Series: TLP3113r

Specifications of TLP3113(F)

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-state Resistance: 35 Ohm
• Load Current: 80mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 40 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP3113F

Absolute Maximum Ratings
CAUTION
equipment are earthed.
Recommended Operating Conditions
Individual Electrical Characteristics
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (10 s)
Isolation Voltage (AC, 1 minute, R.H. < = 60%) (NOTE1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(NOTE1): Device considered a two-terminal device : Pins 1 and, 2 shorted together, and pins 3 and 4 shorted
Supply Voltage
Forward Current
On-State Current
Operating Temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
Forward Current
Forward Current Derating (Ta > = 25°C)
Reverse Voltage
Junction Temperature
Off-State Output Terminal Voltage
On-State Current
On-State Current Derating (Ta > = 25°C)
Junction Temperature
Forward Voltage
Reverse Current
Capacitance
Off-State Current
Capacitance
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
CHARACTERISTIC
together.
CHARACTERISTIC
CHARACTERISTIC
(Ta = 25°C)
SYMBOL
C
I
OFF
V
C
OFF
I
R
F
T
SYMBOL
(Ta = 25°C)
V
T
I
I
V
V = 0, f = 1 MHz
V
V = 0, f = 100 MHz, t < 1 s
ON
F
I
opr
DD
F
R
OFF
= 10 mA
SYMBOL
= 5 V
ΔI
ΔI
V
BV
ON
T
T
= 30 V, Ta = 50°C
T
I
V
OFF
F
ON
I
T
T
opr
stg
sol
F
/°C
R
TEST CONDITION
2
j
j
S
/°C
MIN.
10
25
⎯
⎯
TYP.
−40~125
RATING
−20~85
⎯
⎯
⎯
⎯
1500
−0.5
−0.8
125
125
260
50
40
80
5
MAX.
32
30
80
60
mA/°C
mA/°C
UNIT
Vrms
mA
mA
UNIT
°C
°C
°C
°C
°C
V
V
mA
mA
°C
MIN.
V
1.0
⎯
⎯
⎯
⎯
TYP.
1.15
0.6
⎯
15
⎯
MAX.
1000
2007-10-01
1.3
1.4
10
⎯
TLP3113
UNIT
μA
pF
pA
pF
V