NUP1301,215 NXP Semiconductors, NUP1301,215 Datasheet - Page 5

IC DIODE ARRAY ESD SOT23-3

NUP1301,215

Manufacturer Part Number
NUP1301,215
Description
IC DIODE ARRAY ESD SOT23-3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NUP1301,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Power (watts)
220W
Polarization
2 Channel Array - Unidirectional
Voltage - Breakdown
100V
Voltage - Reverse Standoff (typ)
80V
Operating Voltage
1.25 V
Breakdown Voltage
100 V
Capacitance
0.6 pF
Termination Style
SMD/SMT
Power Dissipation Pd
250 mW
Operating Temperature Range
- 55 C to + 155 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063605215
NXP Semiconductors
7. Characteristics
NUP1301_1
Product data sheet
Table 9.
T
[1]
[2]
[3]
Symbol
Per diode
V
V
I
C
Per device
V
R
amb
BR
F
CL
d
Pulse test: t
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
= 25 C unless otherwise specified.
Parameter
breakdown voltage
forward voltage
reverse current
diode capacitance
clamping voltage
Electrical characteristics
p
300 s;
Rev. 01 — 11 May 2009
0.02.
Conditions
I
I
I
I
I
V
V
V
T
V
T
f = 1 MHz; V
I
I
R
F
F
F
F
PP
PP
j
j
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 150 C
= 150 C
= 100 A
= 25 V
= 80 V
= 25 V;
= 80 V;
= 1 A
= 11 A
Ultra low capacitance ESD protection array
R
= 0 V
[2][3]
[2][3]
[1]
Min
100
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
0.6
-
-
NUP1301
© NXP B.V. 2009. All rights reserved.
Max
-
715
855
1
1.25
30
100
25
35
0.75
3
20
Unit
V
mV
mV
V
V
nA
nA
pF
V
V
5 of 13
A
A

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