DSPIC30F2011-20I/P Microchip Technology, DSPIC30F2011-20I/P Datasheet - Page 56

IC DSPIC MCU/DSP 12K 18DIP

DSPIC30F2011-20I/P

Manufacturer Part Number
DSPIC30F2011-20I/P
Description
IC DSPIC MCU/DSP 12K 18DIP
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F2011-20I/P

Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 8x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
18-DIP (0.300", 7.62mm)
Core Frequency
40MHz
Core Supply Voltage
5.5V
Embedded Interface Type
I2C, SPI, UART
No. Of I/o's
12
Flash Memory Size
12KB
Supply Voltage Range
2.5V To 5.5V
Package
18PDIP
Device Core
dsPIC
Family Name
dsPIC30
Maximum Speed
20 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
16 Bit
Number Of Programmable I/os
12
Interface Type
I2C/SPI/UART
On-chip Adc
8-chx12-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC30F005 - MODULE SCKT DSPIC30F 18DIP/SOICACICE0202 - ADAPTER MPLABICE 18P 300 MIL
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DSPIC30F2011-20IP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F2011-20I/P
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
dsPIC30F2011/2012/3012/3013
6.2
6.2.1
In order to erase a block of data EEPROM, the
NVMADRU and NVMADR registers must initially point
to the block of memory to be erased. Configure
NVMCON for erasing a block of data EEPROM and
set the WR and WREN bits in the NVMCON register.
Setting the WR bit initiates the erase, as shown in
Example 6-2.
EXAMPLE 6-2:
6.2.2
The NVMADRU and NVMADR registers must point to
the block. Select WR a block of data Flash and set the
WR and WREN bits in the NVMCON register. Setting the
WR bit initiates the erase, as shown in Example 6-3.
EXAMPLE 6-3:
DS70139F-page 56
; Select data EEPROM word, WR, WREN bits
; Start erase cycle by setting WR after writing key sequence
; Erase cycle will complete in 2mS. CPU is not stalled for the Data Erase Cycle
; User can poll WR bit, use NVMIF or Timer IRQ to determine erasure complete
; Select data EEPROM block, WR, WREN bits
; Start erase cycle by setting WR after writing key sequence
; Erase cycle will complete in 2mS. CPU is not stalled for the Data Erase Cycle
; User can poll WR bit, use NVMIF or Timer IRQ to determine erasure complete
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
NOP
NOP
Erasing Data EEPROM
ERASING A BLOCK OF DATA
EEPROM
ERASING A WORD OF DATA
EEPROM
#0x4045,W0
W0
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
#0x4044,W0
W0
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
NVMCON
NVMKEY
NVMKEY
NVMCON
NVMKEY
NVMKEY
DATA EEPROM BLOCK ERASE
DATA EEPROM WORD ERASE
; Initialize NVMCON SFR
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Initiate erase sequence
; Block all interrupts with priority <7 for
; next 5 instructions
;
; Write the 0x55 key
;
; Write the 0xAA key
; Initiate erase sequence
© 2008 Microchip Technology Inc.

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