PIC16F88-I/ML Microchip Technology, PIC16F88-I/ML Datasheet - Page 633

IC MCU FLASH 4KX14 EEPROM 28QFN

PIC16F88-I/ML

Manufacturer Part Number
PIC16F88-I/ML
Description
IC MCU FLASH 4KX14 EEPROM 28QFN
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F88-I/ML

Core Size
8-Bit
Program Memory Size
7KB (4K x 14)
Core Processor
PIC
Speed
20MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
368 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Controller Family/series
PIC16F
No. Of I/o's
16
Eeprom Memory Size
256Byte
Ram Memory Size
368Byte
Cpu Speed
20MHz
No. Of Timers
3
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
368 B
Interface Type
SSP, USART
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
16
Number Of Timers
8
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163014
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28QFN3 - SOCKET TRAN ICE 18DIP/28QFNAC164322 - MODULE SOCKET MPLAB PM3 28/44QFNAC164033 - ADAPTER 28QFN TO 18DIPDV007003 - PROGRAMMER UNIVERSAL PROMATE II
Lead Free Status / Rohs Status
 Details
31.3.6
31.3.7
1997 Microchip Technology Inc.
Tested Crystals and Their Capacitor Values
Example EPROM Memory Erase Times
This table shows the crystal frequency and manufacturer that was used for every tests in this sec-
tion, as well as the capacitor values/ranges that exhibited the best characteristics.
Table 31-2: Example Capacitor Selection for Crystal Oscillators
The UV erase time of an EPROM cell depends on the geometry size of the EPROM cell and the
manufacturing technology.
device.
Table 31-3: Example of Typical EPROM Erase Time Recommendations
Table 31-4:
Note 1: If these criteria are not met, the erase times will be different.
Note:
Example
Device
Crystals Used:
Section 31. Device Characteristics
1
2
3
4
Osc Type
200 kHz
20 MHz
32 kHz
1 MHz
4 MHz
8 MHz
HS
LP
XT
Higher capacitance increases the stability of the oscillator but also increases the start-up time.
These values are for design guidance only.
mode to avoid overdriving crystals with low drive level specification. Since each crystal has its
own characteristics, the user should consult the crystal manufacturer for appropriate values of
external components or verify oscillator performance.
Refer to the device data sheet for the typical erase times for a device.
(Angstroms)
Wavelength
2537
2537
2537
2537
Crystal Frequency
Table 31-3
200 kHz
200 kHz
20 MHz
EPSON CA-301 20.000M-C
32 kHz
1 MHz
4 MHz
4 MHz
8 MHz
EPSON CA-301 8.000M-C
Epson C-001R32.768K-A
STD XTL 200.000KHz
shows some of the expected erase times for each different
ECS ECS-10-13-1
ECS ECS-40-20-1
( W/cm
Intensity
12,000
12,000
12,000
12,000
Capacitor Range
2
)
Rs
may be required in HS mode as well as XT
47-68 pF
15-33 pF
15-33 pF
Distance from UV
C1
lamp (inches)
33 pF
15 pF
15 pF
15 pF
15 pF
1
1
1
1
Capacitor Range
DS31031A-page 31-21
Typical Time
20 PPM
20 PPM
50 PPM
50 PPM
30 PPM
30 PPM
47-68 pF
15-33 pF
15-33 pF
(minutes)
C2
15 - 20
33 pF
15 pF
15 pF
15 pF
15 pF
20
40
60
(1)
31

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