DSPIC30F3012-20I/SO Microchip Technology, DSPIC30F3012-20I/SO Datasheet - Page 51

• Manufacturer Part Number: DSPIC30F3012-20I/SO
• Description: IC DSPIC MCU/DSP 24K 18SOIC
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F3012-20I/SO

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 20 MIPS
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 12
• Program Memory Size: 24KB (8K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 18-SOIC (7.5mm Width)
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: I2C, SPI, UART
• No. Of I/o's: 12
• Flash Memory Size: 24KB
• Supply Voltage Range: 2.5V To 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT18SO-1 - SOCKET TRANSITION 18SOIC 300MILAC30F005 - MODULE SCKT DSPIC30F 18DIP/SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F301220ISO

5.6
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode. A programming operation is nominally 2 msec in
duration and the processor stalls (waits) until the
operation
(NVMCON<15>) starts the operation and the WR bit is
automatically cleared when the operation is finished.
5.6.1
The user can erase or program one row of program
Flash memory at a time. The general process is:
1.
2.
3.
EXAMPLE 5-1:
© 2010 Microchip Technology Inc.
; Setup NVMCON for erase operation, multi word write
; program memory selected, and writes enabled
; Init pointer to row to be ERASED
Read one row of program Flash (32 instruction
words) and store into data RAM as a data
“image”.
Update the data image with the desired new
data.
Erase program Flash row.
a)
b)
c)
d)
e)
f)
g)
Programming Operations
Set up NVMCON register for multi-word,
program Flash, erase, and set WREN bit.
Write address of row to be erased into
NVMADRU/NVMDR.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit. This begins erase cycle.
CPU stalls for the duration of the erase cycle.
The WR bit is cleared when erase cycle
ends.
MOV
MOV
MOV
MOV
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
PROGRAM FLASH
is
finished.
#0x4041,W0
W0
#tblpage(PROG_ADDR),W0
W0
#tbloffset(PROG_ADDR),W0
W0, NVMADR
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
ERASING A ROW OF PROGRAM MEMORY
NVMCON
NVMADRU
NVMKEY
NVMKEY
Setting
the
dsPIC30F2011/2012/3012/3013
WR
bit
;
; Init NVMCON SFR
;
; Initialize PM Page Boundary SFR
; Intialize in-page EA[15:0] pointer
; Initialize NVMADR SFR
; Block all interrupts with priority <7 for
; next 5 instructions
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
4.
5.
6.
5.6.2
Example 5-1
to erase a row (32 instructions) of program memory.
Write 32 instruction words of data from data
RAM “image” into the program Flash write
latches.
Program 32 instruction words into program
Flash.
a)
b)
c)
d)
e)
f)
Repeat steps 1 through 5 as needed to program
desired amount of program Flash memory.
Set up NVMCON register for multi-word,
program Flash, program, and set WREN
bit.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit. This begins program cycle.
CPU stalls for duration of the program cycle.
The WR bit is cleared by the hardware
when program cycle ends.
ERASING A ROW OF PROGRAM
MEMORY
shows a code sequence that can be used
DS70139G-page 51