MC9S08QG4CDTE Freescale Semiconductor, MC9S08QG4CDTE Datasheet - Page 52

• Manufacturer Part Number: MC9S08QG4CDTE
• Description: IC MCU 4K FLASH 10MHZ 16-TSSOP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QG4CDTE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 12
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-TSSOP
• Processor Series: S08QG
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 12
• Number Of Timers: 1
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08QG8E
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 20MHz
• Total Internal Ram Size: 256Byte
• # I/os (max): 12
• Number Of Timers - General Purpose: 1
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 16
• Package Type: TSSOP
• Package: 16TSSOP
• Family Name: HCS08
• Maximum Speed: 20 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Chapter 4 Memory Map and Register Definition
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
50
PROGRAM FLOW
FLASH BURST
Figure 4-3. FLASH Burst Program Flowchart
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
YES
WRITE COMMAND (0x25) TO FCMD
0
TO BUFFER ADDRESS AND DATA
AND CLEAR FCBEF (Note 2)
NEW BURST COMMAND ?
WRITE TO FCDIV (Note 1)
TO LAUNCH COMMAND
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FACCERR ?
FPVIO OR
FCBEF ?
FCCF ?
START
DONE
1
1
NO
1
NO
YES
0
0
Note 2: Wait at least four bus cycles before
Note 1: Required only once after reset.
ERROR EXIT
checking FCBEF or FCCF.
Freescale Semiconductor