C8051F313-GM Silicon Laboratories Inc, C8051F313-GM Datasheet - Page 112

• Manufacturer Part Number: C8051F313-GM
• Description: IC 8051 MCU 8K FLASH 28MLP
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F31xr

Specifications of C8051F313-GM

• Core Size: 8-Bit
• Program Memory Size: 8KB (8K x 8)
• Oscillator Type: Internal
• Core Processor: 8051
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: POR, PWM, Temp Sensor, WDT
• Number Of I /o: 25
• Program Memory Type: FLASH
• Ram Size: 1.25K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 17x10b
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• No. Of I/o's: 25
• Ram Memory Size: 1280Byte
• Cpu Speed: 25MHz
• No. Of Timers: 4
• No. Of Pwm Channels: 5
• Digital Ic Case: RoHS Compliant
• Rohs Compliant: Yes
• Processor Series: C8051F3x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 1.25 KB
• Interface Type: I2C, SMBus, SPI, UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 25
• Number Of Timers: 5
• Operating Supply Voltage: 2.7 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F310DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit
• Data Rom Size: 128 B
• Height: 0.88 mm
• Length: 5 mm
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Width: 5 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 770-1006 - ISP 4PORT FOR SILABS C8051F MCU
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: 336-1256

C8051F310/1/2/3/4/5/6/7
10.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
Steps 5–7 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
10.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.
112
V
*Note: 512 bytes at locations 0x3E00 (C8051F310/1) are reserved.
DD
Erase Cycle Time
Write Cycle Time
= 2.7 to 3.6 V; –40 to +85 °C unless otherwise specified.
Parameter
Endurance
Flash Size
Step 1. Disable interrupts (recommended).
Step 2. Erase the 512-byte Flash page containing the target location, as described in
Step 3. Set the PSWE bit (register PSCTL).
Step 4. Clear the PSEE bit (register PSCTL).
Step 5. Write the first key code to FLKEY: 0xA5.
Step 6. Write the second key code to FLKEY: 0xF1.
Step 7. Using the MOVX instruction, write a single data byte to the desired location within the
10.1.2.
512 byte sector.
Table 10.1. Flash Electrical Characteristics
25 MHz System Clock
25 MHz System Clock
C8051F310/1/6/7
C8051F312/3/4/5
Conditions
Rev. 1.7
16384*
8192
20 k
Min
10
40
100 k
Typ
15
55
—
—
Max
20
70
—
—
—
Erase/Write
Section
Units
bytes
ms
µs