MC908JB16DWE Freescale Semiconductor, MC908JB16DWE Datasheet - Page 62

• Manufacturer Part Number: MC908JB16DWE
• Description: IC MCU 16K FLASH 6MHZ USB 28SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908JB16DWE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 6MHz
• Connectivity: SCI, USB
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 21
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOIC (7.5mm Width)
• Processor Series: HC08JB
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 384 B
• Interface Type: I2C/SCI/SPI/USB
• Maximum Clock Frequency: 12 MHz
• Number Of Programmable I/os: 21
• Number Of Timers: 4
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
• Minimum Operating Temperature: 0 C
• Controller Family/series: HC08
• No. Of I/o's: 21
• Ram Memory Size: 384Byte
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: I2C, SCI, SPI
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

FLASH Memory
4.5 FLASH Block Erase Operation
Technical Data
62
NOTE:
NOTE:
Use the following procedure to erase a block of FLASH memory. A block
consists of 512 consecutive bytes starting from addresses $X000,
$X200, $X400, $X600, $X800, $XA00, $XC00 or $XE00. The 48-byte
user interrupt vectors area also forms a block. Any block within the 16K
bytes user memory area ($BA00–$F9FF) can be erased alone.
The 48-byte user interrupt vectors, $FFD0–$FFFF, cannot be erased by
the block erase operation because of security reasons. Mass erase is
required to erase this block.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
1. Set the ERASE bit and clear the MASS bit in the FLASH control
2. Write any data to any FLASH address within the address range of
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
register.
the block to be erased.
again.
FLASH Memory
rcv
(1µs), the memory can be accessed in read mode
Erase
nvs
nvh
(5µs).
(5µs).
(10ms).
MC68HC908JB16
Freescale Semiconductor
—
Rev. 1.1