ATMEGA3250PV-10AUR Atmel, ATMEGA3250PV-10AUR Datasheet - Page 277

• Manufacturer Part Number: ATMEGA3250PV-10AUR
• Description: MCU AVR 32K FLASH 10MHZ 100TQFP
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA3250PV-10AUR

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: SPI, UART/USART, USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 32KB (16K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

25.6.2
25.6.3
25.6.4
8023F–AVR–07/09
Considerations for Efficient Programming
Chip Erase
Programming the Flash
5. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
6. Wait at least 300 µs before giving any parallel programming commands.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
If the rise time of the V
tive algorithm can be used.
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Monitor V
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
5. Wait until V
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
applied to ensure the Prog_enable Signature has been latched.
V
applied to ensure the Prog_enable Signature has been latched.
commands.
CC
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
to 0V.
CC
CC
, and as soon as V
actually reaches 4.5 -5.5V before giving any parallel programming
CC
is unable to fulfill the requirements listed above, the following alterna-
CC
and GND.
Table 25-8 on page 275
CC
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
Table 25-11 on page
(1)
memories plus Lock bits. The Lock bits are
ATmega325P/3250P
to “0000”, RESET pin to 0V and
276. When programming the Flash,
277