STR911FAW44X6T STMicroelectronics, STR911FAW44X6T Datasheet - Page 71

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STR911FAW44X6T

Manufacturer Part Number
STR911FAW44X6T
Description
MCU 16/32BIT FLASH 128-TQFP
Manufacturer
STMicroelectronics
Series
STR9r
Datasheet

Specifications of STR911FAW44X6T

Core Processor
ARM9
Core Size
32-Bit
Speed
96MHz
Connectivity
CAN, EBI/EMI, I²C, IrDA, Microwire, SPI, SSI, SSP, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
80
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
96K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 2 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
128-LQFP
Processor Series
STR911x
Core
ARM966E-S
3rd Party Development Tools
EWARM, EWARM-BL, MCBSTR9, MCBSTR9U, MCBSTR9UME, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STR9-COMSTICK, STR910-EVAL, STR91X-SK/HIT, STR91X-SK/IAR, STR91X-SK/KEI, STR91X-SK/RAI, STR9-DK/RAIS, STR91X-DK/IAR, STX-PRO/RAIS, STR912-D/RAIS, STR79-RVDK/CPP, STR79-RVDKCPP/9, STR79-RVDK, STR79-RVDK/9, STR9-RVDK/BAS, STR79-RVDK/UPG
For Use With
497-5067 - BOARD EVAL FOR STR910 FAMILY497-5066 - KIT STARTER KEIL FOR STR910497-5065 - KIT STARTER IAR KICKSTART STR912497-5064 - KIT STARTER FOR STR910 FAMILY
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STR911FAW44X6T
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STR911FAW44X6T
Manufacturer:
ST
0
STR91xFAxxx
Table 25.
1.
Bank erase
Sector erase
Bank program
Sector program
Word program
V
DD
= 1.8 V, V
Flash memory program/erase characteristics (Flash size = 1 MB / 2 MB)
Table 26.
DDQ
Program/erase cycles
Data retention
= 3.3 V
Primary bank (2 Mbytes)
Primary bank (1 Mbytes)
Secondary bank (128 Kbytes)
Of primary bank (64 Kbytes)
Of secondary bank (16 Kbytes)
Primary bank (2 Mbytes)
Primary bank (1 Mbytes)
Secondary bank (128 Kbytes)
Of primary bank (64 Kbytes)
Of secondary bank (16 Kbytes)
Parameter
Parameter
,
T
A
= 2 5°C.
Flash memory endurance
Per word
Doc ID 13495 Rev 6
Test conditions
Half word (16 bits)
Test conditions
Typ
1300
1060
100K
500
500
120
Min
2.5
7.5
32
16
15
20
8
(1)
Typ after 100K
W/E cycles
Electrical characteristics
Value
Typ
Value
1400
1140
600
520
130
36
18
20
10
3
9
(1)
Max
1800
1380
Max
850
640
160
46
23
22
11
11
4
cycles
years
Unit
71/102
Unit
ms
ms
ms
ms
ms
µs
s
s
s
s
s

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