ST10F272M-4TR3 STMicroelectronics, ST10F272M-4TR3 Datasheet - Page 140

• Manufacturer Part Number: ST10F272M-4TR3
• Description: MCU 16BIT 256K FLASH 144-LQFP
• Manufacturer: STMicroelectronics
• Series: ST10r

Specifications of ST10F272M-4TR3

• Core Processor: ST10
• Core Size: 16-Bit
• Speed: 40MHz
• Connectivity: ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 111
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 20K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 144-MQFP, 144-PQFP
• Processor Series: ST10F27x
• Core: ST10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Electrical characteristics
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1.
2.
3.
4.
5.
For the complete set of parameters characterizing the ST10F272M A/D converter equivalent
circuit, refer to
Supposing a design of the filter, with the pole exactly at the maximum frequency of the
signal, the time constant of the filter is:
Using the relation between C
it is possible to define C
As a consequence of step 1 and 2, RC can be chosen:
Considering the current injection limitation and supposing that the source can go up to
12 V, the total series resistance can be defined as:
from which it is now simple to define the value of R
Now the three elements of the external circuit R
conditions discussed in the previous paragraphs have been used to size the
component, the other must now be verified. The relation which allows minimization of
the accuracy error introduced by the switched capacitance equivalent resistance is in
this case:
So the error due to the voltage partitioning between the real resistive path and C
less then half a count (considering the worst case when V
The other condition to be verified is if the time constants of the transients are really and
significantly shorter than the sampling period duration T
Section 24.7: A/D converter characteristics on page
10 τ 2
V A
⋅
⋅
τ 1
R S R F R L R SW R AD
-------------------------------------------------------------------------- -
=
=
F
+
10 R
:
(
R SW
R L
⋅ L
R F
R S R F R L
F
+
=
R C C F
C F
and C
=
R EQ
⋅
+
R EQ
+
V AM
------------ - R F R S
(
I INJ
-------------------- -
2πf 0 C F
=
C S
R AD
+
4000 C S
=
1
=
+
S
+
–
-------------- -
f C C S
)
and taking some margin (4000 instead of 2048),
C P1
----------- -
2πf 0
⋅
1
1
⋅
=
=
+
C S
–
995Ω
=
V AM
------------ -
=
+
I INJ
=
=
C P2
15.9µs
10MΩ
16nF
2.8ns
=
=
=
F
≅
, C
2.9kΩ
)
2.35mV
4kΩ
=
1kΩ
L
F
:
290ns
and R
<< T
S
<
:
S
A
1
-- - LSB
2
< T
L
= 1µs
= 5 V):
are defined. Some
S
131.
= 1µs
ST10F272M
S
is