MC9S08FL8CBM Freescale Semiconductor, MC9S08FL8CBM Datasheet - Page 26

• Manufacturer Part Number: MC9S08FL8CBM
• Description: MCU 8BIT 8K FLASH 32-SDIP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08FL8CBM

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: SCI
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 30
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SDIP (0.400", 10.16mm)
• Processor Series: S08FL
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 768 B
• Interface Type: SCI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 30
• Number Of Timers: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08FL16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12-ch x 8-bit
• Controller Family/series: HCS08
• No. Of I/o's: 30
• Ram Memory Size: 768Byte
• Cpu Speed: 20MHz
• No. Of Timers: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1
2
Electrical Characteristics
5.11
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
26
Typical values assume V
only and are not tested in production.
Based on input pad leakage current. Refer to pad electricals.
C
D
D
1
2
3
4
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
The frequency of this clock is controlled by a software setting.
C
D
D
D
D
P
P
P
P
C
C
Quantization
Error
Input Leakage
Error
Characteristic
DD
Flash Specifications
Supply voltage for program/erase
–40 C to 85 C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
= 5.0 V, bus frequency = 4.0 MHz.
T
T = 25 C
L
Table 13. 8-Bit ADC Characteristics (V
to T
H
= –40 C to 85 C
Characteristic
8-bit mode
8-bit mode
DDA
5
2
2
= 5.0 V, Temp = 25 C, f
3
3
Conditions
1
4
MC9S08FL16 Series Data Sheet, Rev. 3
2
Table 14. Flash Characteristics
2
ADCK
V
Symbol
Symb
RI
RI
prog/erase
= 1.0 MHz unless otherwise stated. Typical values are for reference
V
f
t
t
t
t
t
E
E
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
Read
prog
DDBP
DDPE
REFH
Q
IL
= V
DD
Min
DDA
—
—
. These values are measured at room temperatures
Min
150
4.5
4.5
—
—
—
5
5
, V
REFL
Typ
0.1
—
1
= V
Typical
20,000
10,000
4000
100
—
—
—
—
SSA
9
4
4
6
Max
0.5
1
) (continued)
Freescale Semiconductor
Max
6.67
LSB
LSB
200
5.5
5.5
Unit
—
—
—
—
2
2
Pad leakage
Comment
DD
cycles
years
t
t
t
t
Unit
kHz
* R
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
s
V
V
supply.
AS
2