HA9P5127-5ZX96 Intersil, HA9P5127-5ZX96 Datasheet - Page 9

• Manufacturer Part Number: HA9P5127-5ZX96
• Description: IC OPAMP 8.5MHZ PRECISION 8-SOIC
• Manufacturer: Intersil

Specifications of HA9P5127-5ZX96

• Amplifier Type: General Purpose
• Number Of Circuits: 1
• Slew Rate: 10 V/µs
• Gain Bandwidth Product: 8.5MHz
• Current - Input Bias: 15nA
• Voltage - Input Offset: 30µV
• Current - Supply: 3.5mA
• Current - Output / Channel: 25mA
• Voltage - Supply, Single/dual (±): 10 V ~ 30 V, ±5 V ~ 15 V
• Operating Temperature: 0°C ~ 75°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• -3db Bandwidth: -
• Other names: HA9P5127-5ZX96

Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE POTENTIAL (Powered Up):
Metallization Mask Layout
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
104 mils x 65 mils x 19 mils
2650µm x 1650µm x 483µm
Type: Al, 1% Cu
Thickness: 16k
V-
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Å
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
±2k
BAL
For information regarding Intersil Corporation and its products, see www.intersil.com
Å
BAL
9
-IN
V+
+IN
HA-5127, HA-5127A
HA-5127
PASSIVATION:
TRANSISTOR COUNT:
PROCESS:
Type: Nitride (Si
Silox Thickness: 12k
Nitride Thickness: 3.5k
63
Bipolar Dielectric Isolation
OUT
3
N
4
) over Silox (SiO
Å
Å
±2k
±1.5k
Å
NC
V-
Å
2
, 5% Phos.)
July 27, 2005
FN2906.6