EL5172IS-T7 Intersil, EL5172IS-T7 Datasheet - Page 9

• Manufacturer Part Number: EL5172IS-T7
• Description: IC LINE RCVR 250MHZ SGL 8-SOIC
• Manufacturer: Intersil

Specifications of EL5172IS-T7

• Amplifier Type: Differential
• Number Of Circuits: 1
• Slew Rate: 800 V/µs
• Gain Bandwidth Product: 100MHz
• -3db Bandwidth: 250MHz
• Current - Input Bias: 6µA
• Voltage - Input Offset: 7000µV
• Current - Supply: 5.6mA
• Current - Output / Channel: 95mA
• Voltage - Supply, Single/dual (±): 4.75 V ~ 11 V, ±2.38 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -

Typical Performance Curves
Simplified Schematic
FIGURE 21. PACKAGE POWER DISSIPATION vs AMBIENT
CH1
CH2
1.2
1.0
0.8
0.6
0.4
0.2
M = 100ns, CH1 = 200mV/DIV, CH2 = 5V/DIV
0
0
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
FIGURE 19. ENABLED RESPONSE
TEMPERATURE
870mW
625mW
486mW
θ
JA
25
AMBIENT TEMPERATURE (°C)
MSOP8
= +206°C/W
50
θ
100ns/DIV
JA
9
VIN+
QSOP24
= +115°C/W
75
Q
1
85
I
1
θ
JA
100
R
= +160°C/W
SOIC8
VIN-
D1
Q
I
(Continued)
2
2
125
V
FBP
S
+
Q
150
3
I
EL5172, EL5372
3
R
FBN
D2
Q
I
4
4
R
R
Q
25
3
1
7
FIGURE 22. PACKAGE POWER DISSIPATION vs AMBIENT
V
S
R
R
CH2
-
CH1
4
2
Q
1.4
1.2
1.0
0.8
0.6
0.4
0.2
M = 400ns, CH1 = 200mV/DIV, CH2 = 5V/DIV
9
Q
0
Q
V
0
8
B2
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
6
FIGURE 20. DISABLED RESPONSE
TEMPERATURE
909mW
870mW
1.136W
θ
V
JA
B1
25
MSOP8/10
= +115°C/W
AMBIENT TEMPERATURE (°C)
C
C
50
x1
θ
JA
QSOP24
400ns/DIV
= +88°C/W
75
V
OUT
θ
85
JA
= +110°C/W
SOIC8
100
125
September 14, 2010
150
FN7311.9