MMBZ6V2AL,215 NXP Semiconductors, MMBZ6V2AL,215 Datasheet - Page 11

• Manufacturer Part Number: MMBZ6V2AL,215
• Description: DIODE ESD PROT DBL 3V SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ6V2AL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Power (watts): 24W
• Polarization: 2 Channel Array - Unidirectional
• Voltage - Breakdown: 5.89V
• Voltage - Reverse Standoff (typ): 3V
• Clamping Voltage: 8.7 V
• Current Rating: 2.76 A
• Channels: 1 Channel
• Breakdown Voltage: 6.2 V
• Capacitance: 175 pF
• Termination Style: Solder Tail
• Power Dissipation Pd: 290 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Fig 7.
Fig 8.
(1) MMBZ5V6AL: V
(2) MMBZ6V8AL: V
(3) MMBZ9V1AL: V
(4) MMBZ27VAL: V
−V
CL
ESD protection diode
Reverse leakage current as a function of ambient temperature; typical values
V-I characteristics for a unidirectional
−V
BR
−V
RWM
−
P-N
RWM
RWM
RWM
RWM
+
= 22 V
= 3 V
= 4.5 V
= 6 V
(nA)
I
RM
I
−I
−I
10
10
10
10
−I
−I
10
10
RM
R
PPM
PP
10
−1
−2
−3
−4
1
3
2
−75
Rev. 02 — 10 December 2009
006aab324
−25
Low capacitance unidirectional double ESD protection diodes
(1)
(2)
(3)
(4)
V
25
Fig 9.
75
−V
CL
−V
T
125
V-I characteristics for a bidirectional
ESD protection diode
amb
BR
006aab841
−V
(°C)
RWM
175
MMBZxAL series
I
PPM
I
PP
I
RM
I
R
−I
−I
−I
−I
RM
R
PP
PPM
−
© NXP B.V. 2009. All rights reserved.
V
RWM
+
006aab325
V
BR
11 of 17
V
CL