MMBZ6V2AL,215 NXP Semiconductors, MMBZ6V2AL,215 Datasheet - Page 5

• Manufacturer Part Number: MMBZ6V2AL,215
• Description: DIODE ESD PROT DBL 3V SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ6V2AL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Power (watts): 24W
• Polarization: 2 Channel Array - Unidirectional
• Voltage - Breakdown: 5.89V
• Voltage - Reverse Standoff (typ): 3V
• Clamping Voltage: 8.7 V
• Current Rating: 2.76 A
• Channels: 1 Channel
• Breakdown Voltage: 6.2 V
• Capacitance: 175 pF
• Termination Style: Solder Tail
• Power Dissipation Pd: 290 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 7.
T
[1]
[2]
Table 8.
Symbol
T
T
T
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
amb
j
amb
stg
ESD
In accordance with IEC 61643-321 (10/1000 μs current waveform).
Measured from pin 1 or 2 to pin 3.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and
standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 or 2 to pin 3.
= 25
°
C unless otherwise specified.
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
junction temperature
ambient temperature
storage temperature
Parameter
electrostatic discharge
voltage
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
…continued
Conditions
IEC 61000-4-2
(contact discharge)
machine model
Conditions
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
MMBZxAL series
[1][2]
[2]
Min
-
−55
−65
Min
-
-
© NXP B.V. 2009. All rights reserved.
Max
150
+150
+150
Max
30
2
Unit
°C
°C
°C
Unit
kV
kV
2
.
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