MW7IC2425NBR1 Freescale Semiconductor, MW7IC2425NBR1 Datasheet

IC PWR AMP RF 2400MHZ TO-272-16

MW7IC2425NBR1

Manufacturer Part Number
MW7IC2425NBR1
Description
IC PWR AMP RF 2400MHZ TO-272-16
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW7IC2425NBR1

Current - Supply
195mA
Frequency
2.45GHz
Gain
27.7dB
Package / Case
TO-272-16
Rf Type
ISM
Test Frequency
2.45GHz
Voltage - Supply
28V
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Power Gain (typ)@vds
28.5dB
Frequency (max)
2.45GHz
Package Type
TO-272 WB EP
Pin Count
16
Output Capacitance (typ)@vds
111@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
43.8%
Mounting
Surface Mount
Mode Of Operation
OFDM/WIMAX
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
P1db
-
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2450 MHz. Devices are suitable for use in industrial, medical and scientific
applications.
• Typical CW Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW
Features
• Qualified Up to a Maximum of 28 V
• Integrated Quiescent Current Temperature Compensation with
• Integrated ESD Protection
• Excellent Thermal Stability
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
Designed primarily for CW large - signal output and driver applications at
P
Output Power
Enable/Disable Function
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
out
Power Gain — 27.7 dB
Power Added Efficiency — 43.8%
V
V
V
V
RF
GS1
GS2
DS1
DS1
= 25 Watts CW, f = 2450 MHz
in
Figure 1. Functional Block Diagram
Temperature Compensation
(1)
DD
Quiescent Current
= 28 Volts, I
DD
Operation
DQ1
(1)
= 55 mA, I
DQ2
= 195 mA,
RF
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
out
/V
DS2
Note: Exposed backside of the package is
MW7IC2425NBR1
Document Number: MW7IC2425N
MW7IC2425NR1
TO - 270 WB - 16
CASE 1886 - 01
TO - 272 WB - 16
CASE 1329 - 09
V
V
GND
V
V
GND
MW7IC2425GNR1
MW7IC2425NBR1
RF
GS1
GS2
DS1
DS1
NC
NC
NC
NC
MW7IC2425NR1
PLASTIC
PLASTIC
2450 MHz, 25 W CW, 28 V
in
Figure 2. Pin Connections
the source terminal for the transistors.
LATERAL N - CHANNEL
RF POWER MOSFETs
10
11
1
2
3
4
5
6
7
8
9
(Top View)
TO - 270 WB - 16 GULL
MW7IC2425GNR1
CASE 1887 - 01
16
15
14
13
12
PLASTIC
Rev. 0, 3/2009
GND
NC
RF
NC
GND
out
/V
DS2
1

Related parts for MW7IC2425NBR1

MW7IC2425NBR1 Summary of contents

Page 1

... Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor = 55 mA 195 mA, DQ1 DQ2 Operation out DS2 (1) MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 Document Number: MW7IC2425N Rev. 0, 3/2009 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 2450 MHz CW LATERAL N - CHANNEL RF POWER MOSFETs CASE 1886 - 270 PLASTIC MW7IC2425NR1 CASE 1887 - 01 ...

Page 2

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Measured in Freescale Narrowband Test Fixture. 5. See Appendix A for functional test measurements and test fixture. MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 2 Stage 1, 28 Vdc DQ1 Stage 2, 28 Vdc, I ...

Page 3

... V DS(on) C oss = 0 Vdc) GS (4) (2) (In Freescale Narrowband Test Fixture PAE IRL = 28 Vdc mA DQ1 G ps PAE PAR ACPR IRL MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 Min Typ Max — — 10 — — 1 — — 1 1.2 1.9 2.7 — 2.7 — 9.5 10.5 11.5 0.15 0.47 0.8 — ...

Page 4

... Chip Capacitors C2, C5, C8, C13 10 nF Chip Capacitors C3, C6, C9, C14 1 μ Chip Capacitors C10 2.4 pF Chip Capacitor C11 3.3 pF Chip Capacitor C16, C17 10 μ Chip Capacitors R1 KΩ, 1/4 W Chip Resistors R2, R3, R5 KΩ, 1/4 W Chip Resistors MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 4 NC DUT ...

Page 5

... Figure 4. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Layout RF Device Data Freescale Semiconductor C15 C17 C14 C9 C13 C10 MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 MW7IC2425N Rev C16 C12 C11 5 ...

Page 6

... Figure 5. Power Gain and Power Added Efficiency versus CW Output Power 0.1 Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function 0.1 Figure 8. Power Gain and Power Added Efficiency versus CW Output Power as a Function of V MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 P1dB = 44.5 dBm (28. 100 13 Figure 6 ...

Page 7

... 2450 MHz OUTPUT POWER (WATTS) CW out 1st Stage 2nd Stage 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Vdc CW, and PAE = 43.8%. DD out MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 50 varied from Vdc 195 mA DQ2 0 100 DQ1 Vdc DQ1 10 100 ...

Page 8

... Z load f = 2450 MHz Figure 12. Series Equivalent Source and Load Impedance — Narrowband MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 Ω source f = 2450 MHz Vdc mA 195 mA DQ1 DQ2 out source MHz W 2450 32 - j6.256 6.2 - j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 9 ...

Page 10

... MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 11 ...

Page 12

... MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 13 ...

Page 14

... MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 15 ...

Page 16

... MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 17 ...

Page 18

... AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Mar. 2009 • Initial Release of Data Sheet MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 18 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 19

... Rogers R04350B, 0.0133″, ε * Line length includes microstrip bends = 25°C unless otherwise noted) C Symbol = 28 Vdc mA DQ1 G ps PAE PAR ACPR IRL MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 MW7IC2725N Rev. 1.3 B1 C16 C12 C11 = 3.48 r Min Typ Max Unit = 275 mA Avg 2700 MHz, DQ2 out 25 ...

Page 20

... DS DQ2 Fixture Gate Quiescent Voltage ( Vdc 275 mAdc, Measured in Functional Test) DD DQ2 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case (Case Temperature 81° CW) out MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 20 APPENDIX A (continued) = 25°C unless otherwise noted) C Symbol V GS(Q) V GG(Q) V GS(Q) V GG(Q) Stage 1, 28 Vdc, I ...

Page 21

... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1 21 ...

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