MW6IC2240GNBR1 Freescale Semiconductor, MW6IC2240GNBR1 Datasheet
MW6IC2240GNBR1
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MW6IC2240GNBR1 Summary of contents
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... INTEGRATED POWER AMPLIFIERS CASE 1329 - 272 PLASTIC MW6IC2240NBR1 CASE 1329A - 272 GULL PLASTIC MW6IC2240GNBR1 GND 1 16 GND V 2 DS1 out in V DS2 GS1 V 9 GS2 DS1 12 GND 11 GND (Top View) the source terminal for the transistors. Figure 2. Pin Connections MW6IC2240NBR1 MW6IC2240GNBR1 1 ...
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... Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MW6IC2240NBR1 MW6IC2240GNBR1 2 Stage 1, 28 Vdc 210 mA DQ ...
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... Vdc DQ1 P sat Min Typ Max = 210 mA 370 mA, DQ2 — 30 — — ±5 — — 0.2 — — ±1 — — 2.8 — — ±9 — Min Typ Max = 110 mA 370 mA, DQ2 — 60 — MW6IC2240NBR1 MW6IC2240GNBR1 Unit MHz % dB ° ns ° Unit W 3 ...
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... Table 7. MW6IC2240NBR1(GNBR1) Test Circuit Component Designations and Values Part C1, C2 1.5 pF Chip Capacitors C3 1.8 pF Chip Capacitor C4, C5 6.8 pF Chip Capacitors C6, C7, C10, C11, C12, C13 4.7 μF Chip Capacitors C8 8.2 pF Chip Capacitor C9 0.5 pF Chip Capacitor R1 18 kW, 1/4 W Chip Resistor R2 8.2 kW, 1/4 W Chip Resistor MW6IC2240NBR1 MW6IC2240GNBR1 4 1 DUT ...
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... C12 C11 R1 V GG1 Figure 4. MW6IC2240NBR1(GNBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor V DD1 C13 C10 R2 V GG2 V DD2 C4 C6 MW6IC2240, Rev MW6IC2240NBR1 MW6IC2240GNBR1 5 ...
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... 2135 MHz 2145 MHz 24 Two−Tone Measurements, 10 MHz Tone Spacing 23 0 OUTPUT POWER (WATTS) PEP out Figure 7. Two - Tone Power Gain versus Output Power MW6IC2240NBR1 MW6IC2240GNBR1 6 TYPICAL CHARACTERISTICS Vdc 4.5 W (Avg.) DD out I = 210 mA 370 mA DQ1 DQ2 Two−Tone Measurements, 10 MHz Tone Spacing ...
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... Gain and Power Added Efficiency versus Output Power = 28 Vdc (PEP 210 mA, out DQ1 = 370 mA, Two−Tone Measurements 1 10 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual = 110 −25 −30 −35 −40 −45 −50 −55 −60 −65 100 MW6IC2240NBR1 MW6IC2240GNBR1 100 7 ...
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... 210 mA 370 mA DQ1 DQ2 2140 MHz PAE OUTPUT POWER (WATTS) CW out Figure 13. Power Gain and Power Added Efficiency versus Output Power MW6IC2240NBR1 MW6IC2240GNBR1 8 TYPICAL CHARACTERISTICS 60 30 −30_C 50 29 25_C 40 28 85_C 100 Figure 14. Power Gain versus Output Power 1st Stage ...
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... Z = Device input impedance as measured from in gate to ground Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network load 2230 MHz = 4.5 W Avg. load Ω MW6IC2240NBR1 MW6IC2240GNBR1 9 ...
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... MW6IC2240NBR1 MW6IC2240GNBR1 210 mA 370 mA, 50 Ohm System) DD DQ1 DQ2 ∠ φ 0.0013 63.602 0.0020 0.0012 42.219 ...
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... Temperature 9 Compensation Z6, Z7 PCB Description V DD2 OUTPUT C10 0.727″ x 0.056″ Microstrip 1.066″ x 0.078″ Microstrip Taconic TLX8, 0.020″, ε = 2.55 r Part Number Manufacturer C3225X5R1H225MT TDK C1206CK104K5RC Kemet 08051J1R2BBS AVX 08051J6R8CBS AVX 08051J5R6CBS AVX 3224W Bourns MW6IC2240NBR1 MW6IC2240GNBR1 11 ...
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... V DD1 MW6IC2240NB Rev Figure 18. MW6IC2240NBR1(GNBR1) Test Circuit Component Layout — SCDMA MW6IC2240NBR1 MW6IC2240GNBR1 12 V DD2 C4 C8 C10 C9 C11 Device Data Freescale Semiconductor ...
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... Alt− 7.5 1.28 MHz Channel BW VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz +ALT2 in 1.28 MHz BW +3.2 MHz Offset −ALT1 in +ALT1 in 1.28 MHz BW 1.28 MHz BW −1.6 MHz Offset +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) MW6IC2240NBR1 MW6IC2240GNBR1 13 ...
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... MHz Figure 23. Series Equivalent Input and Load Impedance — SCDMA MW6IC2240NBR1 MW6IC2240GNBR1 2070 MHz f = 1950 MHz f = 1950 MHz Z load = 50 Ω Vdc 280 mA 375 mA DD DQ1 DQ2 load MHz W 1950 42.975 - j10.510 12.419 - j4.771 1960 41.871 - j9.592 12.233 - j5.001 1970 40.898 - j9.050 11 ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW6IC2240NBR1 MW6IC2240GNBR1 15 ...
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... MW6IC2240NBR1 MW6IC2240GNBR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW6IC2240NBR1 MW6IC2240GNBR1 17 ...
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... MW6IC2240NBR1 MW6IC2240GNBR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW6IC2240NBR1 MW6IC2240GNBR1 19 ...
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... MW6IC2240NBR1 MW6IC2240GNBR1 20 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description and V callouts, Fig. 3, Test Circuit Schematic Fig. 4, Test Circuit Component BIAS SUPPLY to PAE (Power Added Efficiency) for Figs. 19 and 20 Carrier and 6 - Carrier D data and plot in Fig. 23, Series Impedance and listed MW6IC2240NBR1 MW6IC2240GNBR1 21 ...
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... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MW6IC2240NBR1 MW6IC2240GNBR1 Document Number: MW6IC2240N Rev. 6, 12/2008 22 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...