MW6IC2240GNBR1 Freescale Semiconductor, MW6IC2240GNBR1 Datasheet - Page 21

• Manufacturer Part Number: MW6IC2240GNBR1
• Description: IC PWR AMP RF 4.5W TO272-16GW
• Manufacturer: Freescale Semiconductor

Specifications of MW6IC2240GNBR1

• Current - Supply: 210mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 28dB
• Package / Case: TO-272-16 Gull Wing
• Rf Type: Cellular, W-CDMA
• Voltage - Supply: 28V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -

RF Device Data
Freescale Semiconductor
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
3
4
5
6
Dec. 2006
Feb. 2007
Dec. 2008
Oct. 2006
Date
• Added “including TD - SCDMA” to data sheet description, p. 1
• Added Part Number and Manufacturer to Resistors in Table 7, Component Designations and Values, p. 4
• Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical
• Added Product Documentation and Revision History, p. 21
• Updated Part Numbers in Table 7, Component Designations and Values, to RoHS compliant part numbers,
• Corrected V
• Updated Part Numbers in Tables 7 and 9, Component Designations and Values, to latest RoHS compliant
• Removed lower voltage tests from Fig. 14, Power Gain versus Output Power, due to fixed tuned fixture
• Replaced Fig. 15, MTTF versus Junction Temperature with updated graph. Removed Amps
• Changed callout η
• Corrected Z
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
• Changed 220°C to 225°C in Capable Plastic Package bullet, p. 1
• Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in
• Changed Storage Temperature Range in Max Ratings table from - 65 to +200 to - 65 to +150 for
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Updated Part Numbers in Table 7, Component Designations and Values, to latest RoHS compliant part
characteristic curves, test signal and series impedance, p. 11 - 14
p. 4
Layout, p. 5
part numbers, p. 4, 11
limitations, p. 8
operating characteristics and location of MTTF calculator for device, p. 8
TD - SCDMA ACPR, ALT and Power Added Efficiency versus Output Power, p. 13
number, PCN13232, p. 1, 2
Figure 1, Functional Block Diagram, p. 1
standardization across products, p. 2
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 2
numbers, p. 4
in
BIAS
data and plot in Fig. 23, Series Impedance, p. 14
and V
PRODUCT DOCUMENTATION
D
to PAE (Power Added Efficiency) for Figs. 19 and 20, 3 - Carrier and 6 - Carrier
SUPPLY
REVISION HISTORY
callouts, Fig. 3, Test Circuit Schematic, p. 4, Fig. 4, Test Circuit Component
Description
MW6IC2240NBR1 MW6IC2240GNBR1
2
and listed
21