MW6IC2240GNBR1 Freescale Semiconductor, MW6IC2240GNBR1 Datasheet - Page 2

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MW6IC2240GNBR1

Manufacturer Part Number
MW6IC2240GNBR1
Description
IC PWR AMP RF 4.5W TO272-16GW
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW6IC2240GNBR1

Current - Supply
210mA
Frequency
2.11GHz ~ 2.17GHz
Gain
28dB
Package / Case
TO-272-16 Gull Wing
Rf Type
Cellular, W-CDMA
Voltage - Supply
28V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
P1db
-
Test Frequency
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW6IC2240GNBR1
Manufacturer:
FREESCALE
Quantity:
20 000
MW6IC2240NBR1 MW6IC2240GNBR1
2
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) V
P
Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on
CCDF.
out
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain
Power Added Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
W - CDMA Application
(P
W - CDMA Application
(P
= 4.5 W Avg., f = 2157 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel
calculators by product.
Select Documentation/Application Notes - AN1955.
out
out
= 4.5 W Avg.)
= 40 W CW)
Characteristic
Test Methodology
Test Methodology
Characteristic
(1,2)
Rating
(T
C
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 25°C unless otherwise noted)
DQ
DQ
DQ
DQ
= 210 mA
= 370 mA
= 110 mA
= 370 mA
Symbol
ACPR
PAE
G
IM3
IRL
ps
Symbol
Symbol
Rating
V
R
V
T
T
P
T
DSS
θJC
stg
3
GS
DD
C
in
J
25.5
13.7
Min
= 28 Vdc, I
1A (Minimum)
III (Minimum)
DQ1
A (Minimum)
Package Peak
Typ
- 43
- 46
- 15
Temperature
28
15
- 65 to +150
Value
Class
- 0.5, +68
= 210 mA, I
- 0.5, +6
Value
0.87
150
225
260
1.8
1.0
2.0
Freescale Semiconductor
23
(2,3)
Max
- 40
- 43
- 10
30
DQ2
RF Device Data
= 370 mA,
(continued)
°C/W
dBm
Unit
Unit
Unit
Vdc
Vdc
Unit
dBc
dBc
°C
°C
°C
°C
dB
dB
%

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