IGBT N-CHAN 150A 600V ISOTOP

 

STGE200NB60S

Manufacturer Part NumberSTGE200NB60S
DescriptionIGBT N-CHAN 150A 600V ISOTOP
ManufacturerSTMicroelectronics
SeriesPowerMESH™
STGE200NB60S datasheets

Availability: In stock

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

Select quantity

 

Specifications of STGE200NB60S

ConfigurationSingleVoltage - Collector Emitter Breakdown (max)600V
Vce(on) (max) @ Vge, Ic1.6V @ 15V, 100ACurrent - Collector (ic) (max)200A
Current - Collector Cutoff (max)500µAInput Capacitance (cies) @ Vce1.56nF @ 25V
Power - Max600WInputStandard
Ntc ThermistorNoMounting TypeChassis Mount
Package / CaseISOTOPTransistor TypeIGBT
Dc Collector Current200ACollector Emitter Voltage Vces600V
Power Dissipation Pd600WOperating Temperature Range-55°C To +150°C
No. Of Pins4Collector- Emitter Voltage Vceo Max600 V
Collector-emitter Saturation Voltage1.2 VMaximum Gate Emitter Voltage+/- 20 V
Continuous Collector Current At 25 C200 AGate-emitter Leakage Current+/- 100 nA
Power Dissipation600 WMaximum Operating Temperature+ 150 C
Continuous Collector Current Ic Max200 AMinimum Operating Temperature- 55 C
Mounting StyleScrewCollector Emitter Voltage V(br)ceo600V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Igbt Type-Other names497-6731-5
STGE200NB60S
show all specifications
STGE200NB60S PDF datasheetSTGE200NB60S PDF datasheet #2
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
Page 1/13

Download datasheet (277Kb)Embed
Next
General features
V
CE(sat)
TYPE
V
CES
(typ.)
1.2V
STGE200NB60S 600V
1.3V
■
High input impedance (voltage driven)
■
Low on-voltage drop (Vcesat)
■
Off losses include tail current
■
Low gate charge
■
High current capability
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized to achieve very low VCE(sat) (@ max
frequency of 1KHz).
Applications
■
Low frequency motor controls
■
Aluminum welding equipment
Order codes
Part number
STGE200NB60S
November 2006
N-channel 150A - 600V - ISOTOP
Low drop PowerMESH™ IGBT
I
T
C
C
150A
100°C
200A
25°C
Internal schematic diagram
Marking
Package
GE200NB60S
ISOTOP
Rev 8
STGE200NB60S
ISOTOP
Packaging
Tube
1/13
www.st.com
13

Related parts for STGE200NB60S

Part Number DescriptionManufacturer Datasheet
  STGE200N60K IGBT N-CH 150A 600V ISOTOP STMicroelectronics
  HCF4040BF STMicroelectronics [RIPPLE-CARRY BINARY COUNTER/DIVIDERS] STMicroelectronics
  HCF4054BF STMicroelectronics [LIQUID-CRYSTAL DISPLAY DRIVERS] STMicroelectronics
STEVAL-MKI062V2  STEVAL-MKI062V2 BOARD EVAL FOR MEMS SENSORS STMicroelectronics
  GS-R405 STMicroelectronics
  BUV298A STMicroelectronics
  BUV98A STMicroelectronics
  BUT32V NPN TRANSISTOR POWER MODULE STMicroelectronics
  STTA12006TV2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE STMicroelectronics
  E110NS20FD STMicroelectronics
  MDS50-800 DIODE / SCR MODULE STMicroelectronics
  MDS35-800 DIODE / SCR MODULE STMicroelectronics
  E16N100 Search -----> STE16N100 STMicroelectronics
  E53NA50 Search ---> STE53NA50 STMicroelectronics
  BUV98AF NPN Transistor Power Module STMicroelectronics

STGE200NB60S Summary of contents

  • Page 1

    ... General features V CE(sat) TYPE V CES (typ.) 1.2V STGE200NB60S 600V 1.3V ■ High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current ■ Low gate charge ■ High current capability Description Using the latest high voltage technology based on ...

  • Page 2

    ... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/ STGE200NB60S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

  • Page 3

    ... STGE200NB60S 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Collector-emitter voltage (V CES V Gate-emitter voltage GE I Collector current (continuous Collector current (continuous (1) I Collector current (pulsed Total dissipation at T TOT Derating factor V Insulation winthstand voltage (DC) ISO T Storage temperature stg T Operating junction temperature j 1. ...

  • Page 4

    ... Max rating, @ 125° ±20V 15V 15V 15V CE , Parameter Test conditions V = 25V 1MHz 480V 15V 480V clamp Tj = 125° STGE200NB60S Min. Typ 600 250µ 100A 1.2 C =150A,@100°C 1 100A 80 C Min. Typ. Max. 1560 1100 95 560 = 100A 170 300 = 10Ω ...

  • Page 5

    ... STGE200NB60S Table 5. Switching on/off (inductive load) Symbol t Delay time d(on) t Current rise time r (di/dt) Turn-on current slope on t Dealy time d(on) t Current rise time r (di/dt) Turn-on current slope on t Cross-over time Off voltage rise time r off Delay time d off t Current fall time ...

  • Page 6

    ... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 3. Transconductance Figure 5. Gate charge vs gate-source voltage Figure 6. 6/13 Figure 2. Transfer characteristics Figure 4. Collector-emitter on voltage vs temperature Capacitance variations STGE200NB60S ...

  • Page 7

    ... STGE200NB60S Figure 7. Normalized gate threshold voltage vs temperature Figure 9. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector Electrical characteristics Figure 8. Collector-emitter on voltage vs collector current Figure 10. Switching losses vs temperature current 7/13 ...

  • Page 8

    ... Electrical characteristics Figure 13. Thermal impedance 8/13 Figure 14. Turn-off SOA STGE200NB60S ...

  • Page 9

    ... STGE200NB60S 3 Test circuit Figure 15. Test circuit for inductive load switching Figure 17. Switching waveform Figure 16. Gate charge test circuit Figure 18. Diode recovery time waveform Test circuit 9/13 ...

  • Page 10

    ... These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. ECOPACK specifications are available at: 10/13 www.st.com STGE200NB60S ...

  • Page 11

    ... STGE200NB60S DIM ISOTOP MECHANICAL DATA mm MIN. TYP. MAX. 11.8 12.2 8.9 9.1 1.95 2.05 0.75 0.85 12.6 12.8 25.15 25.5 31.5 31.7 4 4.1 4.3 14.9 15.1 30.1 30.3 37.8 38.2 4 7.8 8 Package mechanical data inch MIN. TYP. MAX. 0.466 0.480 0.350 ...

  • Page 12

    ... Revision history 5 Revision history Table 7. Revision history Date 28-Feb-2005 26-Jul-2006 03-Nov-2006 12/13 Revision 6 Complete version 7 New template 8 New value inserted on STGE200NB60S Changes Table 1.: Absolute maximum ratings ...

  • Page 13

    ... STGE200NB60S Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords:

  • stge2
  • stge200nb60s
  • stge200n60k
  • STGE200NB60S datasheet
  • STGE200NB60S data sheet
  • STGE200NB60S pdf datasheet
  • STGE200NB60S component
  • STGE200NB60S part
  • STGE200NB60S distributor
  • STGE200NB60S RoHS
  • STGE200NB60S datasheet download