STGE50NC60WD STMicroelectronics, STGE50NC60WD Datasheet - Page 12

• Manufacturer Part Number: STGE50NC60WD
• Description: IGBT UFAST N-CH 100A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE50NC60WD

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 40A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 4.7nF @ 25V
• Power - Max: 260W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 260 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Transistor Type: IGBT
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8781-5

Package mechanical data
12/14
DIM.
M
A
B
C
D
E
G
H
K
N
O
F
L
J
N
25.15
MIN.
11.8
1.95
0.75
12.6
31.5
14.9
30.1
37.8
8.9
4.1
7.8
4
4
O
J
G
K
L
M
ISOTOP MECHANICAL DATA
TYP.
mm
MAX.
12.2
2.05
0.85
12.8
25.5
31.7
15.1
30.3
38.2
9.1
4.3
8.2
0.466
0.350
0.076
0.029
0.496
0.990
1.240
0.157
0.161
0.586
1.185
1.488
0.157
0.307
MIN.
B
A
C
TYP.
inch
STGE50NC60WD
MAX.
0.480
0.358
0.080
0.033
0.503
1.003
1.248
0.169
0.594
1.193
1.503
0.322