STGE50NC60WD STMicroelectronics, STGE50NC60WD Datasheet - Page 6

• Manufacturer Part Number: STGE50NC60WD
• Description: IGBT UFAST N-CH 100A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE50NC60WD

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 40A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 4.7nF @ 25V
• Power - Max: 260W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 260 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Transistor Type: IGBT
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8781-5

Electrical characteristics
6/14
Table 8.
Symbol
I
I
Q
Q
rrm
rrm
V
t
t
rr
rr
rr
rr
f
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
Parameter
I
I
I
I
Tj = 25°C, di/dt = 100 A/µs
Figure 19
I
Tj =125°C, di/dt = 100A/µs
Figure 19
f
f
f
f
f
= 15A
= 15A, Tj = 125°C
= 40A, Tj = 125°C
= 40A,V
= 40A,V
Test conditions
R
R
= 50V,
= 50V,
Min.
Typ.
1.35
100
164
525
STGE50NC60WD
1.5
1.2
3.6
6.4
55
Max.
2.9
Unit
nC
nC
ns
ns
V
V
V
A
A