APTGF90A60T1G Microsemi Power Products Group, APTGF90A60T1G Datasheet - Page 4

• Manufacturer Part Number: APTGF90A60T1G
• Description: IGBT MODULE NPT PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF90A60T1G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 90A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.3nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
250
200
150
100
250
200
150
100
50
50
0
8
7
6
5
4
3
2
1
0
0
1.20
1.10
1.00
0.90
0.80
0
0
6
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
J
25
1
CE
= 25°C
Output characteristics (V
V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
GE
GE
T
2
8
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
T
, Junction Temperature (°C)
Transfer Characteristics
1
J
=125°C
3
50
10
4
T
J
=25°C
5
2
75
12
6
T
J
GE
7
=25°C
T
J
=15V)
100
3
=125°C
14
Ic=180A
8
Ic=45A
Ic=90A
9
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125
10
16
4
250
200
150
100
120
100
3.5
2.5
1.5
0.5
50
80
60
40
20
18
16
14
12
10
0
4
3
2
1
0
0
8
6
4
2
0
25
25
0
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
APTGF90A60T1G
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
Output Characteristics (V
CE
J
= 90A
= 25°C
, Collector to Emitter Voltage (V)
50
T
J
50
T
, Junction Temperature (°C)
C
50
, Case Temperature (°C)
1
100
Gate Charge (nC)
75
V
Gate Charge
150
CE
=300V
75
2
250µs Pulse Test
< 0.5% Duty cycle
V
V
200
GE
T
100
CE
J
=25°C
=120V
= 15V
GE
250
100
=10V)
T
3
Ic=180A
V
Ic=90A
125
J
=125°C
CE
Ic=45A
=480V
300
125
150
350
4
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