APTGF90A60T1G Microsemi Power Products Group, APTGF90A60T1G Datasheet - Page 4
APTGF90A60T1G
Manufacturer Part Number
APTGF90A60T1G
Description
IGBT MODULE NPT PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF90A60T1G.pdf
(6 pages)
Specifications of APTGF90A60T1G
Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 90A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.3nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
250
200
150
100
250
200
150
100
50
50
0
8
7
6
5
4
3
2
1
0
0
1.20
1.10
1.00
0.90
0.80
0
0
6
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
J
25
1
CE
= 25°C
Output characteristics (V
V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
GE
GE
T
2
8
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
T
, Junction Temperature (°C)
Transfer Characteristics
1
J
=125°C
3
50
10
4
T
J
=25°C
5
2
75
12
6
T
J
GE
7
=25°C
T
J
=15V)
100
3
=125°C
14
Ic=180A
8
Ic=45A
Ic=90A
9
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125
10
16
4
250
200
150
100
120
100
3.5
2.5
1.5
0.5
50
80
60
40
20
18
16
14
12
10
0
4
3
2
1
0
0
8
6
4
2
0
25
25
0
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
APTGF90A60T1G
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
Output Characteristics (V
CE
J
= 90A
= 25°C
, Collector to Emitter Voltage (V)
50
T
J
50
T
, Junction Temperature (°C)
C
50
, Case Temperature (°C)
1
100
Gate Charge (nC)
75
V
Gate Charge
150
CE
=300V
75
2
250µs Pulse Test
< 0.5% Duty cycle
V
V
200
GE
T
100
CE
J
=25°C
=120V
= 15V
GE
250
100
=10V)
T
3
Ic=180A
V
Ic=90A
125
J
=125°C
CE
Ic=45A
=480V
300
125
150
350
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