APTGF90A60T1G Microsemi Power Products Group, APTGF90A60T1G Datasheet
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APTGF90A60T1G
Specifications of APTGF90A60T1G
Related parts for APTGF90A60T1G
APTGF90A60T1G Summary of contents
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... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGF90A60T1G V = 600V CES I = 90A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...
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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90A60T1G = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGF90A60T1G Min Typ Max IGBT 0.3 Diode 0.65 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... Junction Temperature (°C) J =15V =25° =125° =25° Ic=180A Ic=90A Ic=45A 100 125 www.microsemi.com APTGF90A60T1G Output Characteristics (V =10V) GE 250 250µs Pulse Test < 0.5% Duty cycle 200 T =25°C J 150 100 T =125° Collector to Emitter Voltage (V) CE Gate Charge 18 V =120V I = 90A 16 ...
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... Eon, 180A 15V Eoff, 180A 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) APTGF90A60T1G Turn-Off Delay Time vs Collector Current 250 200 150 100 V = 400V 5Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...
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... Coes 50 Cres Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 200 160 120 www.microsemi.com APTGF90A60T1G Reverse Bias Safe Operating Area 200 400 600 800 V , Collector to Emitter Voltage ( 400V CE ZVS 5Ω 125° 75° ...