APTGT100DH170G Microsemi Power Products Group, APTGT100DH170G Datasheet - Page 3

• Manufacturer Part Number: APTGT100DH170G
• Description: IGBT MOD TRENCH ASYM BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100DH170G

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 9nF @ 25V
• Power - Max: 560W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol Characteristic
SP6 Package outline
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Torque
Thermal and package characteristics
V
R
T
T
Wt
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To heatsink
For terminals
APTGT100DH170G
Diode
IGBT
M6
M5
3500
Min
-40
-40
-40
3
2
Typ
Max
0.22
0.39
150
125
100
280
3.5
5
°C/W
Unit
N.m
°C
V
g
3 - 5