APTGT100DH170G Microsemi Power Products Group, APTGT100DH170G Datasheet - Page 4

• Manufacturer Part Number: APTGT100DH170G
• Description: IGBT MOD TRENCH ASYM BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100DH170G

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 9nF @ 25V
• Power - Max: 560W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
200
175
150
125
100
200
175
150
125
100
75
50
25
87.5
62.5
37.5
12.5
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
75
50
25
100
0
0.2
0.1
0
75
50
25
0.00001
0
0
0
5
0
0.5
T
V
V
I
T
Output Characteristics (V
C
J
CE
GE
J
6
=125°C
= 100A
= 125°C
0.05
5
0.5
0.3
0.9
0.7
0.1
Transfert Characteristics
= 900V
=15V
Gate Resistance (ohms)
1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
10
1.5
8
15
0.0001
V
T
V
CE
J
=25°C
GE
2
9
20
(V)
(V)
T
J
2.5
=25°C
10
25
T
GE
J
3
11
30
=125°C
T
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
0.001
3.5
35
12
Eon
Eoff
Er
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Single Pulse
40
4
13
IGBT
0.01
250
200
150
100
200
160
120
100
50
APTGT100DH170G
80
40
80
60
40
20
0
0
0
0
0
0
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
T
V
V
R
T
J
GE
G
J
J
CE
GE
G
=125°C
0.1
=4.7Ω
= 125°C
25
=15V
= 125°C
= 4.7Ω
= 900V
= 15V
400
1
50
Output Characteristics
800
75 100 125 150 175 200
V
2
GE
I
V
C
=20V
V
CE
(A)
CE
1200
(V)
1
(V)
V
3
GE
=15V
1600
V
GE
V
4
=13V
GE
Eon
=9V
Eoff
Er
2000
10
5
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