APTGT100DH170G Microsemi Power Products Group, APTGT100DH170G Datasheet - Page 5

• Manufacturer Part Number: APTGT100DH170G
• Description: IGBT MOD TRENCH ASYM BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100DH170G

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 9nF @ 25V
• Power - Max: 560W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.35
0.25
0.15
0.05
25
20
15
10
5
0
0.4
0.3
0.2
0.1
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
20
0.1
hard
0.3
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
40
ZVS
0.0001
60
I
C
(A)
80
V
D=50%
R
T
T
100
CE
G
J
C
=125°C
=75°C
=4.7 Ω
=900V
120 140
0.001
rectangular Pulse Duration (Seconds)
Single Pulse
www.microsemi.com
0.01
200
175
150
125
100
APTGT100DH170G
75
50
25
0
0
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
T
1.5
J
F
=25°C
(V)
1
2
Diode
T
J
=125°C
2.5
10
3
5 - 5