IXGN60N60C2D1 IXYS, IXGN60N60C2D1 Datasheet - Page 2

• Manufacturer Part Number: IXGN60N60C2D1
• Description: IGBT 600V 75A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGN60N60C2D1

• Configuration: Single
• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 650µA
• Input Capacitance (cies) @ Vce: 4.75nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 100 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 35
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.26
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.85
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
(T
V
I
t
R
Note 1: PulseTest, t ≤ 300μs, Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
off
on
off
F
ies
oes
res
thJC
thCS
thJC
g
ge
gc
J
J
= 25°C, Unless Oherwise Specified)
= 25°C Unless Otherwise Specified)
Test Conditions
I
V
I
Inductive load, T
I
V
Inductive load, T
I
V
I
I
I
C
C
F
F
F
C
C
V
CE
CE
CE
= 50A, V
= 50A, V
= 60A, V
= 60A, -di/dt = 100A/μs,
= 1A, -di/dt = 200A/μs, V
R
= 50A, V
= 50A, V
Test Conditions
= 100V, V
= 25V, V
= 400V, R
= 400V, R
CE
GE
GE
GE
GE
GE
= 10V, Note 1
= 15V, V
= 0V, Note 1
= 15 V
= 15V
GE
G
G
4,835,592
4,881,106
= 0V, f = 1MHz
= 2
= 2
= 0V,
J
J
= 25°C
= 125°C
Ω
Ω
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
R
= 30V,V
T
T
J
J
5,049,961
5,063,307
5,187,117
CES
= 150°C
= 100°C
GE
= 0V
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
40
Min.
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
4750
0.48
0.90
1.20
0.05
Typ.
530
146
130
65
28
50
18
25
95
35
18
25
80
1.4
58
35
0.26 °C/W
Max.
0.80
150
Max.
0.85 °C/W
6,404,065 B1
6,534,343
6,583,505
2.1
8.3
°C/W
mJ
mJ
nC
nC
nC
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B miniBLOC
6,727,585
6,771,478 B2 7,071,537
IXGN60N60C2
IXGN60N60C2D1
7,005,734 B2
7,063,975 B2
7,157,338B2