IXGN60N60C2D1 IXYS, IXGN60N60C2D1 Datasheet - Page 5

• Manufacturer Part Number: IXGN60N60C2D1
• Description: IGBT 600V 75A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGN60N60C2D1

• Configuration: Single
• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 650µA
• Input Capacitance (cies) @ Vce: 4.75nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 100 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 35
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.26
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.85
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Fig. 13. Forward Current I
Fig. 16. Dynamic Paraments Q
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0.0001
I
Fig. 27. Maximum Transient Thermal Impedance (for diode)
0.001
Z
F
K
0.01
K/W
thJC
160
140
120
100
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
A
80
60
40
20
1.000
0.100
0.010
0.001
0
1
Fig. 27. Maximum Transient Thermal Impeadance Juection to Case (for Diode)
0
0
0.0001
Versus T
I
T
40
RM
VJ
= 150°C
vJ
Q
100°C
25°C
1
RM
0.0001
80
F
Versus V
T
VJ
V
120
F
r,
I
2
RM
0.001
°C
0.001
F
V
160
Q
t
r
rr
4000
3000
2000
1000
Fig. 14. Reverse Recorvery Charge Q
Fig. 17. Recorvery Time t
140
130
120
110
100
nC
ns
90
80
0
100
0.01
0
T
V
Versus -di
-di
VJ
R
= 100°C
= 300V
200
0.01
F
I
F
/dt
= 120A, 60A, 30A
400
Pulse Width [ s ]
F
I
F
/dt
= 30A, 60A, 120A
0.1
-di
600
F
-di
/dt
T
V
rr
VJ
R
t
F
Versus
/dt
= 100°C
= 300V
A/μs
s
800
DSEP 2x61-06A
A/μs
1000
1000
0.1
1
r
I
V
RM
FR
80
60
40
20
20
15
10
A
Fig. 15. Peak Reverse Current I
Fig. 18. Peak Forward Voltage V
0
V
5
0
0
0
T
V
VJ
R
= 100°C
= 300V
t
T
I
rr
200
200
and t
F
Versus -di
VJ
= 60A
= 100°C
IXGN60N60C2
IXGN60N60C2D1
I
F
1
= 120A, 60A, 30A
rr
400
400
Versus -di
F
/dt
600
600
V
di
-di
FR
F
/dt
F
F
/dt
/dt
A/μs
A/μs
800
800
RM
1000
1000
RM
1.6
1.2
0.8
0.4
0.0
μs
10
t
fr