IXGN60N60C2D1 IXYS, IXGN60N60C2D1 Datasheet - Page 3

• Manufacturer Part Number: IXGN60N60C2D1
• Description: IGBT 600V 75A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGN60N60C2D1

• Configuration: Single
• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 650µA
• Input Capacitance (cies) @ Vce: 4.75nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 100 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 35
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.26
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.85
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

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1 00
1 00
4.5
3.5
2.5
90
80
70
60
50
40
30
20
90
80
70
60
50
40
30
20
1 .5
1 0
1 0
0
0
5
4
3
2
1
0.5
0.5
5
6
Fig. 5. Collector-to-Emitter Voltage
1
1
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter voltage
V
G E
8
1 .5
= 1 5V
1 .5
V
1 3V
1 1 V
G E
@ 125 Deg. C
@ 25 Deg. C
V
V
V
9
= 1 5V
CE
CE
GE
1 3V
1 1 V
- Volts
- Volts
- Volts
I
1 0
2
2
C
= 1 00A
1 1
50A
25A
2.5
2.5
9V
T
1 2
5V
7V
J
= 25
9V
1 3
7V
5V
º
3
3
C
1 4
3.5
3.5
1 5
200
200
1 75
1 50
1 25
1 00
1 75
1 50
1 25
1 00
0.9
0.8
0.7
0.6
0.5
75
50
25
1 .2
75
50
25
1 .1
0
0
1
3.5
25
1
Fig. 4. T emperature Dependence of V
V
Fig. 2. Extended Output Characteristics
G E
T
4
1 .5
J
= 1 5V
= 1 25
-40
Fig. 6. Input Admittance
4.5
50
25
º
º
T
C
º
C
J
C
2
V
- Degrees Centigrade
5
G E
@ 25 deg. C
= 1 5V
5.5
V
75
V
1 3V
1 1 V
2.5
GE
CE
- Volts
- Volts
6
IXGN60N60C2
IXGN60N60C2D1
3
1 00
6.5
I
I
I
3.5
C
C
C
7
= 1 00A
= 50A
= 25A
1 25
7.5
9V
7V
5V
4
CE(sat)
8
4.5
1 50
8.5