IXGN60N60C2D1 IXYS, IXGN60N60C2D1 Datasheet - Page 4

• Manufacturer Part Number: IXGN60N60C2D1
• Description: IGBT 600V 75A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGN60N60C2D1

• Configuration: Single
• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 650µA
• Input Capacitance (cies) @ Vce: 4.75nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 100 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 35
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.26
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 0.85
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
1 00
90
80
70
60
50
40
30
20
1 0
1 5
1 2
0
5
4
3
2
0
9
6
3
0
1
20
0
0
R
R
V
V
G E
C E
G
V
I
I
G
C
G
= 1 0 Ohms - - - - -
T
25
= 2 Ohms
30
C E
20
= 1 5V
= 400V
= 50A
= 1 0mA
J
= -40
= 300V
1 25
Fig. 9. Dependence of E
Fig. 7. T ransconductance
25
º
50
40
40
º
º
C
C
Fig. 11. Gate Charge
C
Q
G
75
50
I
60
I
- nanoCoulombs
C
C
- Amperes
- Amperes
1 00
60
80
T
J
T
= 1 25
J
1 25
1 00
= 25
70
off
º
º
C
C
1 50
1 20
on I
80
C
1 75
1 40
90
200
1 00
1 60
10,000
1 0000
1,000
1 000
100
1 00
10
1 0
6
5
4
3
2
0
5
4
3
2
0
1
1
0
25
2
0
f = 1 MHz
T
V
V
Fig. 10. Dependence of E
R
R
V
V
J
GE
CE
G E
C E
G
G
= 1 25
f = 1 M Hz
= 1 0 Ohms - - - - -
5
= 1 5V
= 400V
= 2 Ohms
= 1 5V
= 400V
5
4
Fig. 8. Dependence of E
º
C
T
Fig. 12. Capacitance
10
50
1 0
J
6
- Degrees Centigrade
Fig. 12. Capacitance
15
1 5
R
V
V
CE
8
G
CE
- Ohms
75
- Volts
20
20
- Volts
IXGN60N60C2
IXGN60N60C2D1
1 0
off
25
on T emperature
25
C ies
off
C oes
C res
1 2
on R
1 00
I
I
30
I
C
C
C
C ies
30
C oes
IXYS REF: G_60N60C2(7Y)12-11-08-A
C res
= 75A
I
= 50A
= 1 00A
I
I
C
C
C
G
= 1 00A
= 25A
I
I
= 25A
1 4
C
C
35
= 75A
= 50A
35
1 25
40
1 6
40