STE40NC60 STMicroelectronics, STE40NC60 Datasheet - Page 4

• Manufacturer Part Number: STE40NC60
• Description: MOSFET N-CH 600V 40A ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STE40NC60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 430nC @ 10V
• Input Capacitance (ciss) @ Vds: 11100pF @ 25V
• Power - Max: 460W
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Forward Transconductance Gfs (max / Min): 42 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 40 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3169-5

STE40NC60
Transconductance
Gate Charge vs Gate-source Voltage
4/8
Output Characteristics
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations