APTM100UM65DAG Microsemi Power Products Group, APTM100UM65DAG Datasheet

no-image

APTM100UM65DAG

Manufacturer Part Number
APTM100UM65DAG
Description
MOSFET N-CH 1000V 145A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM100UM65DAG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
78 mOhm @ 72.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
145A
Vgs(th) (max) @ Id
5V @ 20mA
Gate Charge (qg) @ Vgs
1068nC @ 10V
Input Capacitance (ciss) @ Vds
28500pF @ 25V
Power - Max
3250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
SK
G
with Series diode
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Single switch
S
Parameter
D
www.microsemi.com
Application
Features
Benefits
V
R
I
T
T
T
D
c
c
c
DSS
DSon
= 25°C
= 80°C
= 25°C
= 145A @ Tc = 25°C
Zero Current Switching resonant mode
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
High level of integration
AlN substrate for improved thermal performance
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
APTM100UM65DAG
-
-
-
-
-
-
-
= 1000V
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
M5 power connectors
= 65mΩ typ @ Tj = 25°C
Max ratings
DSon
®
1000
3250
3200
145
110
580
±30
78
30
50
MOSFETs
Unit
mJ
W
V
A
V
A
1 – 6

Related parts for APTM100UM65DAG

APTM100UM65DAG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100UM65DAG V = 1000V DSS R = 65mΩ typ @ Tj = 25°C DSon I = 145A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM100UM65DAG = 25°C unless otherwise specified j Test Conditions V = 0V,V = 1000V T = 25° 0V,V = 800V T = 125° ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100UM65DAG Transistor Series diode To Heatsink M6 For teminals M5 www.microsemi.com Min Typ Max Unit 0.038 ° ...

Page 4

... DS(on) 1.4 Normalized to V =10V @ 72.5A 1.3 GS 1.2 1.1 V =10V =20V GS 0.9 0 160 I , Drain Current (A) D APTM100UM65DAG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 480 250µs pulse test @ < 0.5 duty cycle 400 6.5V 320 240 6V 160 5. Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 Drain to Source Voltage (V) DS www.microsemi.com APTM100UM65DAG ON resistance vs Temperature 2.5 V =10V GS I =72.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100UM65DAG 100 V ...

Related keywords