BF1201,215 NXP Semiconductors, BF1201,215 Datasheet
BF1201,215
Specifications of BF1201,215
Related parts for BF1201,215
BF1201,215 Summary of contents
Page 1
DATA SHEET BF1201; BF1201R; BF1201WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 1999 Dec 01 DISCRETE SEMICONDUCTORS 2000 Mar 29 ...
Page 2
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with ...
Page 3
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS I drain current (DC gate 1 current G1 I gate 2 current G2 P total power dissipation tot BF1201; BF1201R BF1201WR T storage temperature stg T operating junction temperature ...
Page 4
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs STATIC CHARACTERISTICS = 25 C; unless otherwise specified SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS V gate 1-source breakdown voltage (BR)G1-SS V gate 2-source breakdown voltage (BR)G2-SS V forward source-gate 1 voltage (F)S-G1 V forward source-gate 2 voltage (F)S-G2 V gate 1-source threshold voltage G1-S(th) ...
Page 5
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs 25 handbook, halfpage V G2 (mA 0 Fig.5 Transfer characteristics; typical values. 100 handbook, halfpage V G2 (μ 0 Fig.7 Gate 1 current as a function of gate 1 voltage; typical values. 2000 Mar 29 MCD935 3.5 V handbook, halfpage 1.5 2 2.5 ...
Page 6
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs 16 handbook, halfpage I D (mA G2 Fig.9 Drain current as a function of gate 1 current; typical values. 25 handbook, halfpage kΩ (mA) 47 kΩ kΩ 62 kΩ G2 connected see Fig.21 Fig.11 Drain current as a function of gate and drain supply voltage; typical values. ...
Page 7
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs 60 handbook, halfpage I G1 (μ k (connected see Fig.21 Fig.13 Gate 1 current as a function of gate 2 voltage; typical values. 120 handbook, halfpage V unw (dBμV) 110 100 k MHz MHz; T unw amb Fig.15 Unwanted voltage for 1% cross-modulation as a function of gain reduction ...
Page 8
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs 2 10 handbook, halfpage Y is (mS − mA amb Fig.17 Input admittance as a function of frequency; typical values handbook, halfpage y fs (mS ϕ mA amb Fig.19 Forward transfer admittance and phase as a function of frequency; typical values. 2000 Mar 29 MCD947 ...
Page 9
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs handbook, full pagewidth R GEN 50 Ω Table 1 Scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 4.72 50 0.987 9.39 100 0.985 18.59 200 0.978 27.74 300 0.976 36.59 400 0.949 45.08 500 0.928 53.26 600 0.905 61.07 700 0.882 ...
Page 10
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs PACKAGE OUTLINES Plastic surface-mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B 2000 Mar scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 ...
Page 11
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R 2000 Mar scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 ...
Page 12
... NXP Semiconductors N-channel dual-gate PoLo MOS-FETs Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 1.1 0.7 mm 0.1 0.3 0.5 0.8 OUTLINE VERSION IEC SOT343R 2000 Mar scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 ...
Page 13
... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
Page 14
... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
Page 15
... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...