BF1201,215 NXP Semiconductors, BF1201,215 Datasheet - Page 8

• Manufacturer Part Number: BF1201,215
• Description: MOSFET 2N-CH 10V 30MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF1201,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Current Rating: 30mA
• Frequency: 400MHz
• Gain: 29dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 1dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
2000 Mar 29
handbook, halfpage
handbook, halfpage
N-channel dual-gate PoLo MOS-FETs
V
I
Fig.17 Input admittance as a function of frequency;
V
I
Fig.19 Forward transfer admittance and phase as
D
D
DS
DS
(mS)
= 15 mA; T
= 15 mA; T
(mS)
Y is
10
y fs
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
a function of frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b is
y fs
ϕ fs
f (MHz)
f (MHz)
g is
MCD947
MCD949
10
10
3
3
−10
(deg)
−10
−1
ϕ fs
2
8
handbook, halfpage
handbook, halfpage
V
I
Fig.18 Reverse transfer admittance and phase as
V
I
Fig.20 Output admittance as a function of
D
D
DS
DS
= 15 mA; T
(mS)
= 15 mA; T
(μS)
Y os
10
10
y rs
10
10
= 5 V; V
= 5 V; V
10
10
BF1201; BF1201R; BF1201WR
−1
−2
1
1
3
2
10
10
a function of frequency; typical values.
frequency; typical values.
G2
G2
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
b os
ϕ rs
g os
y rs
f (MHz)
f (MHz)
Product specification
MCD948
MCD950
10
10
3
3
−10
(deg)
−10
−10
−1
ϕ rs
3
2