BLF7G20L-140P,118 NXP Semiconductors, BLF7G20L-140P,118 Datasheet - Page 5

• Manufacturer Part Number: BLF7G20L-140P,118
• Description: TRANSISTOR PWR LDMOS SOT1121
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-140P,118

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 125W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BLF7G20LS-140P
Product data sheet
Fig 4.
(dB)
G
18.5
17.5
16.5
p
19
18
17
16
0
V
GSM EDGE power gain and drain efficiency as
function of load power; typical values
DS
= 28 V; I
G
η
D
p
20
7.4 GSM EDGE
Dq
= 850 mA; f = 1880 MHz.
40
Fig 6.
60
V
GSM-EDGE RMS EVM and peak EVM as function of load power; typical values
DS
= 28 V; I
80
All information provided in this document is subject to legal disclaimers.
001aam402
P
L
(W)
Dq
EVM
(%)
= 850 mA; f = 1880 MHz.
100
Rev. 2 — 17 August 2010
50
40
30
20
10
60
50
40
30
20
10
0
0
(%)
η
0
D
20
Fig 5.
ACPR
(dBc)
−45
−50
−55
−60
−65
−70
−75
−80
40
0
V
GSM EDGE ACPR at 400 kHz and at 600 kHz as
function of load power; typical values
DS
= 28 V; I
60
20
ACPR
ACPR
BLF7G20LS-140P
Dq
80
400k
600k
= 850 mA; f = 1880 MHz.
001aam404
EVM
P
40
EVM
L
(W)
rms
M
100
Power LDMOS transistor
60
© NXP B.V. 2010. All rights reserved.
80
001aam403
P
L
(W)
100
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