BLF7G20L-200,118 NXP Semiconductors, BLF7G20L-200,118 Datasheet - Page 5

• Manufacturer Part Number: BLF7G20L-200,118
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-200,118

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 50.6A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 55W
• Resistance Drain-source Rds (on): 0.093 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BLF7G20L-200_7G20LS-200
Preliminary data sheet
Fig 3.
Fig 5.
(dB)
G
(1) f = 1805 MHz
(2) f = 1845 MHz
(3) f = 1880 MHz
p
19
18
17
16
15
0
V
at 0.01 % probability on the CCDF.
Power gain and drain efficiency as functions
of average output power; typical values
V
Adjacent power channel ratio (5 MHz) as function of average output power; typical values
DS
DS
= 28 V; I
= 28 V; I
η
7.3 1-carrier W-CDMA
D
40
Dq
Dq
= 1620 mA; f = 1845 MHz; PAR = 7.2 dB
= 1620 mA; PAR = 7.2 dB at 0.01 % probability on the CCDF.
80
APCR
(dBc)
G
−20
−30
−40
−50
−60
p
5M
120
0
P
All information provided in this document is subject to legal disclaimers.
L(AV)
014aab191
(1)
(2)
(3)
(W)
BLF7G20L-200; BLF7G20LS-200
160
40
Rev. 3 — 1 March 2011
50
40
30
20
10
(%)
η
D
80
Fig 4.
PAR
(dB)
(1) f = 1805 MHz
(2) f = 1845 MHz
(3) f = 1880 MHz
120
8
6
4
2
0
V
probability on the CCDF.
Peak-to-average power ratio as a function of
peak power; typical values
P
DS
L(AV)
014aab193
= 28 V; I
(W)
160
100
Dq
= 1620 mA; PAR = 7.2 dB at 0.01 %
200
Power LDMOS transistor
(3)
(2)
(1)
300
© NXP B.V. 2011. All rights reserved.
P
L(M)
014aab192
(W)
400
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