PMEG4010CPA,115 NXP Semiconductors, PMEG4010CPA,115 Datasheet
PMEG4010CPA,115
Manufacturer Part Number
PMEG4010CPA,115
Description
SCHOTTKY RECT 40V SOT1061
Manufacturer
NXP Semiconductors
Specifications of PMEG4010CPA,115
Package / Case
3-HUSON
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
500mV @ 1A
Current - Reverse Leakage @ Vr
55µA @ 40V
Current - Average Rectified (io) (per Diode)
1A
Voltage - Dc Reverse (vr) (max)
40V
Reverse Recovery Time (trr)
45ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Schottky Rectifiers
Peak Reverse Voltage
40 V
Forward Continuous Current
7 A
Max Surge Current
9 A
Configuration
Single
Recovery Time
45 ns
Maximum Power Dissipation
500 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-6524-2
PMEG4010CPA,115
PMEG4010CPA,115
Fit more functions on a PCB
with small, thin medium-power packages
These leadless, medium-power SMD packages measure only 2 x 2 x 0.65 mm and provide
excellent electrical and thermal performance. They enable high integration for a range of
functions, from low V
MOSFETs and FET-KYs.
Key features
} Leadless, medium-power packages
} 3-lead (SOT1061) and 6-lead (SOT1118) versions
} Exposed heat sink for excellent thermal and electrical
} Broad portfolio supports all kinds of applications
} Small dimensions : 2 x 2 x 0.65 mm
} Ideal for mobile and battery-driven applications
} Free of halogens and antimony oxides
} Non-flammability classification UL 94V-0 and RoHS standards
Key benefits
} Optimum power performance while saving space
} Reduced size enables higher integration for smaller designs
} Energy savings
} Similar performance as other medium-power packages, such
performance (P
compliance
as SOT89 (SC-62) and SOT457 (SC-74), in a much smaller
footprint
tot
> 1 W)
CEsat
(BISS) transistors and low V
NXP leadless, 2 x 2 mm
SOT1061 and SOT1118
packages
Key applications
} Portable applications (mobile phones, DSCs, PDAs, etc.)
} Power management
} Load switches
} Battery chargers
} DC/DC converters
} LED driver circuits in LCD backlight units
} Switch Mode Power Supply (SMPS) in mobile equipment
} Notebooks
F
(MEGA) Schottky rectifiers to P-channel
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PMEG4010CPA,115 Summary of contents
Page 1
Fit more functions on a PCB with small, thin medium-power packages These leadless, medium-power SMD packages measure only 0.65 mm and provide excellent electrical and thermal performance. They enable high integration for a range of functions, ...
Page 2
SOT1061 and SOT1118 package characteristics SOT1061 minimized outline Package market comparison packages Chipfet package 3. thj-sp Without K/W heatsink 20 15 from other SOT1118 / (SOT1061) suppliers ...
Page 3
P-channel MOSFET (dual) and FET-KYs in SOT1118 Features } ESD protected MOSFET of > HBM } Very low R of <70 mΩ 4.5 V DSon rating for operation at low ...
Page 4
Low V (BISS) transistors in SOT1061 CEsat Features } Breakthrough in small-signal (BISS collector current (peak Ultra-low saturation voltage V CEsat 200 collector current ...
Page 5
Low V (MEGA) Schottky rectifier in SOT1061 F Features } High forward-current capability with low forward-voltage drop } Housed in leadless medium-power SOT1061 package } Five AEC-Q101-qualified types with - average forward current reverse voltage ...
Page 6
Charger applications The new SOT1061 and SOT1118 packages show best-in-class thermal performance and offer excellent electrical values in a very small footprint size. Low V BISS transistor as pass element CEsat PBSS5630PA Dual P-channel MOSFET as pass element PMDPB65UP Dual ...