PSMN3R5-30LL,115 NXP Semiconductors, PSMN3R5-30LL,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN3R5-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R5-30LL,115

• Input Capacitance (ciss) @ Vds: 2061pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 71 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5591-2

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN3R5-30LL
Product data sheet
Pin
1
2
3
4
5,6,7,8
mb
Type number
PSMN3R5-30LL
Symbol Description
S
S
S
G
D
D
Pinning information
Ordering information
source
source
source
gate
drain
mounting base; connected to
drain
Table 1.
QFN3333
Package
Name
Symbol
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
DS(AL)S
GD
G(tot)
Quick reference data
Parameter
gate-drain charge V
total gate charge
non-repetitive
drain-source
avalanche energy
Description
plastic thermal enhanced very thin small outline package;
no leads; 8 terminals
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 August 2010
Simplified outline
SOT873-1 (QFN3333)
Conditions
V
see
V
V
see
V
V
see
V
I
unclamped; R
D
…continued
GS
DS
GS
DS
GS
DS
GS
= 40 A; V
N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET
Transparent
Figure 15
Figure 15
Figure 15
= 10 V; I
= 15 V; see
= 4.5 V; I
= 15 V; see
= 10 V; I
= 15 V; see
= 10 V; T
8 7 6 5
1 2 3 4
top view
sup
D
D
D
j(init)
GS
= 15 A;
= 15 A;
≤ 30 V;
= 15 A;
Figure
Figure
Figure
= 50 Ω
= 25 °C;
14;
14;
14;
Graphic symbol
PSMN3R5-30LL
mbb076
G
Min
-
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
5
18
37
-
Version
SOT873-1
Max Unit
-
-
-
118
2 of 14
nC
nC
nC
mJ