BUK6218-40C,118 NXP Semiconductors, BUK6218-40C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK6218-40C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6218-40C,118

• Input Capacitance (ciss) @ Vds: 1170pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 18 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6218-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
40
30
20
10
I
40
30
20
10
D
fs
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
T
j
= 175 ° C
2
…continued
20
T
j
4
= 25 ° C
30
V
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
GS
003aae842
DS
= 25 A; V
= 20 A; dI
I
003aae844
D
(V)
Figure 16
(A)
= 25 V
40
Rev. 1 — 4 October 2010
6
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(m Ω )
DSon
(A)
N-channel TrenchMOS intermediate level FET
I
80
60
40
20
50
40
30
20
10
D
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
10.0
= 0 V;
6.0
2.5
5
BUK6218-40C
Min
-
-
-
10
5
Typ
0.9
34
35.9
7.5
15
V
© NXP B.V. 2010. All rights reserved.
GS
V
003aae845
V
003aae843
(V) = 5
DS
GS
Max
1.2
-
-
(V)
(V)
4.5
4.0
3.8
3.6
3.4
3.2
10
20
Unit
V
ns
nC
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