BUK6218-40C NXP Semiconductors, BUK6218-40C Datasheet

MOSFET,N CH,40V,42A,SOT428

BUK6218-40C

Manufacturer Part Number
BUK6218-40C
Description
MOSFET,N CH,40V,42A,SOT428
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK6218-40C

Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
13.5mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
D-PAK
Rohs Compliant
Yes
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using TrenchMOS technology. This product has been designed and
qualified to the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK6218-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 4 October 2010
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoids
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
see
V
T
j
mb
GS
GS
≥ 25 °C; T
Figure 1
Figure 2
= 25 °C; see
= 10 V; T
= 10 V; I
j
D
≤ 175 °C
mb
= 10 A;
= 25 °C;
Figure 11
Suitable for thermally demanding
environments due to 175 °C rating
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
Min
-
-
-
-
Product data sheet
Typ
-
-
-
13.5 16
Max Unit
40
42
60
V
A
W
mΩ

Related parts for BUK6218-40C

BUK6218-40C Summary of contents

Page 1

... BUK6218-40C N-channel TrenchMOS intermediate level FET Rev. 1 — 4 October 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Figure 14 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C N-channel TrenchMOS intermediate level FET Min ≤ sup = 25 °C; j(init Figure 13; ...

Page 3

... ° see Figure 3 see Figure °C mb ≤ 10 µs; pulsed ° ≤ sup °C; unclamped j(init) All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C Min Max - 40 [1] -20 20 [2] -16 16 Figure Figure 168 - 60 -55 175 -55 175 - 42 - 168 = 10 V ...

Page 4

... Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C 0 50 100 150 T 003aae846 =10 μ 100 μ 100 (V) DS © NXP B.V. 2010. All rights reserved. ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6218-40C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C Min Typ Max - - 2.52 003aae858 t δ ...

Page 6

... R G(ext) measured from upper edge of drain mounting base to centre of die ° °C; measured from source lead j to source bond pad. All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C Min Typ Max Unit 1.8 2.3 2 ...

Page 7

... A; dI /dt = -100 A/µ 003aae842 (A) D Fig 6. 003aae844 R (m Ω ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C N-channel TrenchMOS intermediate level FET Min Typ - 0 35.9 80 10 2.5 5 7.5 Output characteristics: drain current as a function of drain-source voltage; typical values ...

Page 8

... I (A) 120 180 T (°C) j Fig 10. Sub-threshold drain current as a function of 003aae848 (V) = 4.5 5.0 6.0 10 (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C N-channel TrenchMOS intermediate level FET - min typ max - ...

Page 9

... GD 003aaa508 Fig 14. Gate-source voltage as a function of gate 003aae853 C iss C oss C rss 10 100 V (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C N-channel TrenchMOS intermediate level FET ( 14V 32V charge; typical values ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C N-channel TrenchMOS intermediate level FET min 10.4 2.95 2.285 4.57 0.5 9 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6218-40C v.1 20101004 BUK6218-40C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 4 October 2010 BUK6218-40C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 4 October 2010 Document identifier: BUK6218-40C ...

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