BUK6218-40C NXP Semiconductors, BUK6218-40C Datasheet - Page 2

• Manufacturer Part Number: BUK6218-40C
• Description: MOSFET,N CH,40V,42A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6218-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 13.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK6218-40C
Product data sheet
Pin
1
2
3
mb
Type number
BUK6218-40C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
Package
Name
DPAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge I
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 4 October 2010
Simplified outline
Conditions
I
V
unclamped
V
see
SOT428 (DPAK)
D
D
…continued
GS
GS
= 42 A; V
= 25 A; V
Figure 14
= 10 V; T
= 10 V; see
1
mb
2
N-channel TrenchMOS intermediate level FET
3
sup
DS
j(init)
= 32 V;
≤ 40 V;
Figure
= 25 °C;
13;
Graphic symbol
BUK6218-40C
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
7.7
Version
SOT428
Max Unit
25
-
2 of 14
mJ
nC