BUK6218-40C NXP Semiconductors, BUK6218-40C Datasheet - Page 9

• Manufacturer Part Number: BUK6218-40C
• Description: MOSFET,N CH,40V,42A,SOT428
• Manufacturer: NXP Semiconductors

Specifications of BUK6218-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 13.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6218-40C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
10
4
3
2
1
0.01
as a function of drain-source voltage; typical
values
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0.1
GS1
I
Q
D
GS
Q
GS2
Q
1
G(tot)
Q
GD
10
003aae853
All information provided in this document is subject to legal disclaimers.
003aaa508
V
DS
(V)
C
C
C
oss
rss
iss
100
Rev. 1 — 4 October 2010
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain
V
(A)
(V)
I
N-channel TrenchMOS intermediate level FET
GS
10
50
S
40
30
20
10
8
6
4
2
0
0
charge; typical values
voltage; typical values
0
0
V
DS
0.3
T
= 14V
j
= 175 ° C
10
BUK6218-40C
0.6
20
32V
0.9
© NXP B.V. 2010. All rights reserved.
T
Q
j
003aae851
G
003aae849
= 25 ° C
V
(nC)
SD
(V)
1.2
30
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