STF11N65K3 STMicroelectronics, STF11N65K3 Datasheet

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STF11N65K3

Manufacturer Part Number
STF11N65K3
Description
MOSFET N-CH 650V 11.0A TO220FP
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet

Specifications of STF11N65K3

Input Capacitance (ciss) @ Vds
1180pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STF11N65K3
Manufacturer:
STMicroelectronics
Quantity:
500
Part Number:
STF11N65K3
Manufacturer:
ST
0
Features
Application
Switching applications
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1.
September 2010
STF10N65K3
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
Type
STF10N65K3
Order codes
Device summary
650 V
V
DSS
< 0.85 Ω
R
DS(on)
max
10N65K3
Marking
11 A
N-channel 650 V, 0.765 Ω, 11 A, TO-220FP
I
D
Doc ID 17931 Rev 1
35 W
Pw
SuperMESH3™ Power MOSFET
Figure 1.
TO-220FP
Package
G(1)
Internal schematic diagram
TO-220FP
STF11N65K3
D(2)
S(3)
1
2
Packaging
3
Tube
www.st.com
AM01476v1
1/13
13

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STF11N65K3 Summary of contents

Page 1

... Table 1. Device summary Order codes STF10N65K3 September 2010 N-channel 650 V, 0.765 Ω TO-220FP SuperMESH3™ Power MOSFET Figure 1. Marking Package 10N65K3 TO-220FP Doc ID 17931 Rev 1 STF11N65K3 TO-220FP Internal schematic diagram D(2) G(1) S(3) Packaging Tube AM01476v1 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 17931 Rev 1 STF11N65K3 . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STF11N65K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Max current during repetitive or single pulse I AR avalanche (pulse width limited Single pulse avalanche energy ...

Page 4

... 4.7 Ω Figure (see Doc ID 17931 Rev 1 Min. Typ 650 =125 ° 100 µ 3.6 A 0.765 Min. Typ. 1180 - 125 7 7.4 23 Min. Typ. 14 15) 35 STF11N65K3 Max. Unit V 1 µA 50 µA 10 µA 4.5 V Ω 0.85 Max. Unit Ω Max Unit ...

Page 5

... STF11N65K3 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µ ...

Page 6

... Figure 3. AM03922v1 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM03923v1 ( ( temperature Figure 7. AM03925v1 R DS(on) (Ω) 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 75 100 125 150 T (°C) J Doc ID 17931 Rev 1 STF11N65K3 Thermal impedance Transfer characteristics =25V Static drain-source on resistance AM03924v1 9 V ...

Page 7

... STF11N65K3 Figure 8. Output capacitance stored energy E oss (µ 200 300 0 100 Figure 10. Gate charge vs gate-source voltage =520V = Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -50 - Figure 9. AM03929v1 (pF) 1000 100 400 500 600 V (V) DS Figure 11. Normalized on resistance vs ...

Page 8

... Electrical characteristics Figure 14. Source-drain diode forward characteristics V SD (V) 0.9 0.8 0.7 0.6 0.5 0.4 0 8/13 AM03932v1 T =-50° =25° =150° ( Doc ID 17931 Rev 1 STF11N65K3 ...

Page 9

... STF11N65K3 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform Figure 16. Gate charge test circuit 3.3 2200 µF µ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/13 Doc ID 17931 Rev 1 STF11N65K3 ® ...

Page 11

... STF11N65K3 Table 9. TO-220FP mechanical data Dim Dia Figure 21. TO-220FP drawing A Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 28.6 9.8 2.9 15 Dia Doc ID 17931 Rev 1 Package mechanical data mm Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10 ...

Page 12

... Revision history 5 Revision history Table 10. Document revision history Date 10-Sep-2010 12/13 Revision 1 First release Doc ID 17931 Rev 1 STF11N65K3 Changes ...

Page 13

... STF11N65K3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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